| Part Number | FDG313N |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Digital FET |
| Description | This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very h... |
| Features |
• 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V. • • • • Low gate charge (1.64 nC typical) Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). Gate-Source Zener for ESD rug... |
| Datasheet |
 FDG313N Datasheet
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