| Part Number | FDG6301N |
| Manufacturer | Fairchild Semiconductor |
| Title | Dual N-Channel/ Digital FET |
| Description | These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS tec... |
| Features |
25 V, 0.22 A continuous, 0.65 A peak. RDS(ON) = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Mo...
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| Datasheet |
 FDG6301N Datasheet
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