| Part Number | HGTG18N120BND |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Title | IGBT |
| Description | HGTG18N120BND is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moder... |
| Features |
• 26 A, 1200 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A • Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • This Device is Pb−Free www.onsemi.com C G E E C G TO... |
| Datasheet |
 HGTG18N120BND Datasheet
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