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LN189M Panasonic Semiconductor GaAlAs Infrared Light Emitting Diode

Description Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit: mm Light source for distance measuring systems s Features • High-power output, high-efficiency: PO = 5.5 mW (typ.) • Fast response and high-speed modulation capability: tr, tf = 20 ns (typ.) • Infrared light emission close to monochromatic light: λP = 880 nm (typ.) • Narrow directivity using spherical lenses; works ...
Features
• High-power output, high-efficiency: PO = 5.5 mW (typ.)
• Fast response and high-speed modulation capability: tr, tf = 20 ns (typ.)
• Infrared light emission close to monochromatic light: λP = 880 nm (typ.)
• Narrow directivity using spherical lenses; works well with optical systems in auto focus systems 6.0±0.3 1 0.4±0.1 Mark (Black) 0.3 , , ,...

Datasheet PDF File LN189M Datasheet - 36.52KB

LN189M  






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