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F1027

Polyfet RF Devices
Part Number F1027
Manufacturer Polyfet RF Devices
Title RF POWER VDMOS TRANSISTOR
Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifi...
Features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature F102...

Datasheet PDF File F1027 Datasheet

F1027   F1027   F1027  




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