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ADT8A80E Datasheet Preview

ADT8A80E Datasheet

SCRs

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ADT8A80E pdf
 
ADV 
                                                                        ADT8A60E/80E
SCRs
General Description
Available either in sensitive or standard gate triggering levels, the 8A
SCR series is suitable to fit all modes of control found inapplications
such as overvoltage crowbar protection, motor control circuits in power
tools and kitchen aids, in-rush current limiting circuits,capacitive discharge
ignition, voltage regulation circuits...
Features
Repetitive Peak Off-State Voltage : 600V and 800V
R.M.S On-State Current ( IT(RMS)= 8A )
These are Pb-Free Devices
3.G
2.A 1.K
2
12
3
TO-252-2
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(AV)
IT(RMS)
ITSM
I2t
dI/dt
PGM
PG(AV)
IGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage
Repetitive peak reverse voltage
Conditions
Tj=25°C
ADT8A60E
ADT8A80E
Average On-State Current
Half Sine Wave , Tc = 100°C
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Half Sine Wave , Tc = 100°C
1/2 Cycle, Sine Wave Non-Repetitive,
tp=10ms(50Hz)Tj =25°C
Tj =25°C,tp =10ms
Critical rate of rise of on-state current Tj =125°C, tr100ns
Forward Peak Gate Power Dissipation Tj =125°C, Pulse Width 20
Forward Average Gate Power
Dissipation
Peak Gate Current
Tj =25°C, tp =10ms
Tj =125°C, Pulse Width 20
Operating Junction Temperature
Storage Temperature
Ratings
600
800
7
8
90
24.5
50
5
1
4
- 40 ~ 125
- 40 ~ 150
Unit
V
V
A
A
A
A2S
A/μs
W
W
A
°C
°C
 
1/6
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ADV
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Feb,2013 -Rev.3.01



ADV
ADV

ADT8A80E Datasheet Preview

ADT8A80E Datasheet

SCRs

No Preview Available !

ADT8A80E pdf
 
ADV 
                                                                        ADT8A60E/80E
Electrical Characteristics ( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
IDRM
IRRM
VTM
VGD
VGT
IGT
IH
IL
dV/dt
Rth(j-c)
Rth(j-a)
Peak Forward Reverse
VDRM = VRRM, RGK = 1K
Tj = 25°C
Blocking Current
VDRM = VRRM, RGK = 1K
Tj = 125°C
Peak On-State Voltage
Non-Trigger Gate Voltage
Gate Trigger Voltage
Gate Trigger Current
ITM = 20A, tp = 380 μs
VD = VDRM RL = 3.3 k
RGK = 1KTj = 125°C
VD = 12V RL = 33
Holding Current
IT = 0.05A RGK = 1K
Latching Current
IG = 1.2 IGT RGK = 1K
Critical Rate of Rise of
VD = 2/3VDRM gate open
Off-State Voltage
RGK = 1KTj = 125°C
Junction to case
Junction to ambient(Copper surface under tab:S=0.5cm2)
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Max.
Max.
ADT8A60E/80E
TS
5
2
1.6
0.2
1.3
0.2 15
5 40
6 50
5 150
20
70
Unit
uA
mA
V
V
V
mA
mA
mA
V/μs
°C/W
°C/W
 
2/6
www.advsemi.com
Feb,2013 -Rev.3.01


Part Number ADT8A80E
Description SCRs
Maker ADV
Total Page 6 Pages
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