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AP3000C-11 Datasheet Preview

AP3000C-11 Datasheet

SILICON PIN DIODE

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AP3000C-11 pdf
AP3000C-11
SILICON PIN DIODE
DESCRIPTION:
The AP3000C-11 is a Passivated
Epitaxial Silicon PIN Diode Housed in
a Hermetically Sealed Glass Package.
This Device is Designed to Cover a
Wide Range of control Applications
Such as RF Switching, Phase Shifting,
Modulation, Duplexing Limiting and
Pulse Forming.
PACKAGE STYLE 01
MAXIMUM RATINGS
IC 100 mA
VCE
PDISS
TJ
TSTG
θJC
300 V
250 mW @ TA = 25 OC
-65 OC to +175 OC
-65 OC to +175 OC
20 OC/W
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NONE
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
VB IR = 10 µA
CJ
VR = 50 V
VR = 40 V
f = 1.0 MHz
CP f = 1.0 MHz
LS
RS IF = 50 mA
f = 100 MHz
TL
IF = 10 mA
IR = 6.0 mA
Trr
IF = 20 mA
IR = 100 mA @ 90%
I-REGION
MINIMUM
300
TYPICAL
0.10
1.0
1000
100
30
MAXIMUM
0.2
0.6
UNITS
V
pF
pF
nH
Ohms
nS
nS
µM
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


Part Number AP3000C-11
Description SILICON PIN DIODE
Maker ASI
Total Page 1 Pages
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