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AVAGO
AVAGO

IAM-92516 Datasheet Preview

IAM-92516 Datasheet

High Linearity GaAs FET Mixer

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IAM-92516 pdf
IAM-92516
High Linearity GaAs FET Mixer
Data Sheet
Description
Avago Technologies’s IAM-92516 is a high linearity GaAs
FET Mixer using 0.5 μm enhancement mode pHEMT
technology. This device houses in Pb-free and Halogen
free 16 pins LPCC 3x3[2] plastic package. The IAM-92516
has built-in LO buffer amplifier which requires -3 dBm LO
power to deliver an input third order intercept point of
27 dBm. LO port is 50 ohm matched and can be driven
differential or single ended while IF port is 200 ohm
matched and fully differential. RF port requires external
matching network for optimum input return loss and
IIP3 performance.
RF and LO frequency range coverage from 400 to
3500 MHz and IF coverage is from DC to 300 MHz.
This mixer consumes 26 mA of current from a single
5V supply. Conversion loss is typically 6 dB and noise
figure is typically 12.5 dB. Excellent output power at 1 dB
compression of 9 dBm. LO to IF, LO to RF and RF to IF
isolation are greater than 30 dB.
The IAM-92516 is ideally suited for frequency up/
down conversion for base station radio card receiver
and transmitter, microwave link transceiver, MMDS,
modulation and demodulation for receiver and
transmitter and general purpose resistive FET mixer,
which require high linearity. All devices are 100% RF and
DC tested.
Pin Connections and Package Marking
Features
DC = 5V @ 26 mA (Typ.)
RF = 1.91 GHz, PinRF = -10 dBm;
LO = 1.7 GHz, PinLO = -3 dBm;
IF = 210 MHz unlesss otherwise specified
Lead-free Option Available
High Linearity: 27 dBm IIP3
Conversion Loss: 6 dB typical
Wide band operation: 400-3500 MHz RF & LO input
DC – 300 MHz IF output
Fully differential or single ended operation
High P1dB: 9 dBm typical
Low current consumption: 5V@ 26 mA typical
Excellent uniformity in product specifications
Small LPCC 3.0 x 3.0 x 0.75 mm package
MTTF > 300 years[1]
MSL-1 and lead-free
Tape-and-Reel packaging option available
Applications
Frequency up/down converter for base station radio
card, microwave link transceiver, and MMDS
Modulation and demodulation for receiver and
transmitter
General purpose resistive FET mixer for other high
linearity applications
Notes:
1. Refer to reliability datasheet for detailed MTTF data.
2. Conform to JEDEC reference outline MO229 for DRP-N
Notes:
Package marking provides orientation andidentification
“M3” = Device Code
“X” = Month code indicates the month of manufacture
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.



AVAGO
AVAGO

IAM-92516 Datasheet Preview

IAM-92516 Datasheet

High Linearity GaAs FET Mixer

No Preview Available !

IAM-92516 pdf
IAM-92516 Absolute Maximum Ratings[1]
Parameter
Units
Device Voltage
CW RF Input Power[2]
CW LO Input Power[2]
Channel Temperature
Storage Temperature
V
dBm
dBm
°C
°C
Absolute Max.
10
+30
20
150
-65 to 150
Thermal Resistance[2,4]
ch-c = 47.6°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assuming DC quiescent conditions and
TA = 25°C.
3. Board (package belly) temperature TB is
25°C. Derate 21 mW/°C for TB > 85°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
Electrical Specifications
TA = 25°C, DC =5V @ 26 mA, RF =1.91 GHz, PinRF = -10 dBm; LO =1.7 GHz, PinLO = -3 dBm, IF = 210 MHz unless otherwise specified.
Symbol
Parameter and Test Condition
Units Min.
Typ.
Max.
Std Dev.[1]
FRF
FLO
FIF
Id
Gc[3]
IIP3[2]
NF[3]
P1dB[3]
RLRF
RLLO
RLIF
ISOLL-R
ISOLL-I
ISOLR-L
Frequency Range, RF
Frequency Range, LO
Frequency Range, IF
Device Current
Conversion Loss
Input Third Order Intercept Point
SSB Noise Figure
Output Power at 1 dB Compression
RF Port Return Loss
LO Port Return Loss
IF Port Return Loss
LO-RF Isolation
LO-IF Isolation
RF-IF Isolation
MHz 400
3500
MHz 400
3500
MHz DC
300
mA 22 26 30 0.89
dB 6 6.9 0.08
dBm 22
27
0.43
dB 12.5
dBm 9
dB 19
dB 24
dB 21
dB 34
dB 56
dB 33
Notes:
1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial
characterization of
this product and is intended to be used as an estimate for distribution of the typical specification.
2. IIP3 test condition: FRF1 = 1.91 GHz, FRF2 = 1.89 GHz with input power of -10 dBm per tone and LO power = -3 dBm at LO frequency FLO= 1.7 GHz.
3. Conversion loss, P1dB and NF data have de-embedded balun loss = 0.8 dB @ 210 MHz.
Simplified Schematic
Figure 1. IAM-92516 Test Board.
2


Part Number IAM-92516
Description High Linearity GaAs FET Mixer
Maker AVAGO
Total Page 7 Pages
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