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Advanced Linear Devices
Advanced Linear Devices

ALD210800 Datasheet Preview

ALD210800 Datasheet

PRECISION N-CHANNEL EPAD MOSFET ARRAY

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ALD210800 pdf
ADVANCED
LINEAR
DEVICES, INC.
e TM
EPAD ®
ENAB
L
E
D
ALD210800/ALD210800A
PRECISION N-CHANNEL EPAD® MOSFET ARRAY
QUAD HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR
VGS(th)= +0.00V
GENERAL DESCRIPTION
FEATURES & BENEFITS
ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is preci-
sion matched at the factory using ALD’s proven EPAD® CMOS technology. These
quad monolithic devices are enhanced additions to the ALD110800A/ALD110800
EPAD® MOSFET Family, with increased forward transconductance and output
conductance, particularly at very low supply voltages.
Intended for low voltage, low power small signal applications, the ALD210800A/
ALD210800 features Zero-Threshold™ voltage, which enables circuit designs
with input/output signals referenced to GND at enhanced operating voltage
ranges. With these devices, a circuit with multiple cascading stages can be
built to operate at extremely low supply/bias voltage levels. For example, a
nanopower input amplifier stage operating at <0.2V supply voltage has been
successfully built with these devices.
ALD210800A/ALD210800 EPAD MOSFETs feature exceptional matched pair
device electrical characteristics of Gate Threshold Voltage VGS(th) set precisely
at +0.00V +0.01V, IDS = +10µA @ VDS = 0.1V, with a typical offset voltage of
only +/- 0.001V (1mV). Built on a single monolithic chip, they also exhibit excel-
lent temperature tracking characteristics. These precision devices are versatile
as design components for a broad range of analog small signal applications
such as basic building blocks for current mirrors, matching circuits, current
sources, differential amplifier input stages, transmission gates, and multiplex-
ers. They also excel in limited operating voltage applications, such as very low
level voltage-clamps and nano-power normally-on circuits.
In addition to precision matched-pair electrical characteristics, each individual
EPAD MOSFET also exhibits well controlled manufacturing characteristics, en-
abling the user to depend on tight design limits from different production batches.
These devices are built for minimum offset voltage and differential thermal re-
sponse, and they can be used for switching and amplifying applications in +0.1V
to +10V (+/- 0.05V to +/-5V) powered systems where low input bias current, low
input capacitance, and fast switching speed are desired. At VGS > 0.00V, the
device exhibits enhancement mode characteristics whereas at VGS <0.00V the
device operates in the subthreshold voltage region and exhibits conventional
depletion mode characteristics, with well controlled turn-off and sub-threshold
levels that operate the same as standard enhancement mode MOSFETs.
• Zero Threshold™ VGS(th) = 0.00 V +/-0.01V
• VOS (VGS(th) match) to 2mV / 10mV max.
• Sub-threshold voltage (nano-power) operation
• < 100 mV Min. operating voltage
• < 1 nA Min. operating current
• < 1 nW Min. operating power
• > 100,000,000:1 operating current ranges
• High transconductance and output conductance
• Low RDS(ON) of 25
• Output current > 50 mA
• Matched and tracked tempco
• Tight lot-to-lot parametric control
• Positive, zero, and negative VGS(th) tempco
• Low input capacitance and leakage currents
APPLICATIONS
• Low overhead current mirrors and current sources
• Zero Power Normally-On circuits
• Energy harvesting detectors
• Very low voltage analog and digital circuits
• Zero power fail-safe circuits
• Backup battery circuits & power failure detector
• Extremely low level voltage-clamps
• Extremely low level zero-crossing detectors
• Matched source followers and buffers
• Precision current mirrors and current sources
• Matched capacitive probes and sensor interfaces
• Charge detectors and charge integrators
• High gain differential amplifier input stage
• Matched peak-detectors and level-shifters
• Multiple Channel Sample-and-Hold switches
• Precision Current multipliers
• Discrete matched analog switches / multiplexers
• Nanopower discrete voltage comparators
ALD210800A/ALD210800 features high input impedance (2.5 x 1010) and high
DC current gain (>108). A sample calculation of the DC current gain at a drain
output current of 30mA and input current of 300pA at 25°C is 30mA/300pA =
100,000,000, which translates into a dynamic operating current range of about
eight orders of magnitude. A series of four graphs titled “Forward Transfer Char-
acteristic”, with sub-titles of second “expanded (subthreshold)”, third “further
expanded (subthreshold)” and fourth “Low Voltage” illustrates the unique wide
dynamic operating range of these devices.
Generally it is recommended that the V+ pin be connected to the most positive
voltage and the V- and IC (internally-connected) pins to the most negative volt-
age in the system. All other pins must have voltages within these voltage limits
at all times. Standard ESD protection facilities and handling procedures for static
sensitive devices are highly recommended when using these devices.
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
16-Pin SOIC
Package
16-Pin Plastic Dip
Package
ALD210800ASCL
ALD210800SCL
ALD210800APCL
ALD210800PCL
* Contact factory for industrial temp. range or user-specified threshold voltage values.
PIN CONFIGURATION
ALD210800
IC* 1
DN1 2
GN1 3
SN1 4
V- 5
DN4 6
GN4 7
SN4 8
M1
V-
V-
M4
V-
M2
V-
V+
M3
V-
16 IC*
15 DN2
14 GN2
13 SN2
12 V+
11 DN3
10 GN3
9 SN3
SCL, PCL PACKAGES
*IC pins are internally connected, connect to V-
©2013 Advanced Linear Devices, Inc., Vers. 1.0
www.aldinc.com
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Advanced Linear Devices
Advanced Linear Devices

ALD210800 Datasheet Preview

ALD210800 Datasheet

PRECISION N-CHANNEL EPAD MOSFET ARRAY

No Preview Available !

ALD210800 pdf
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
Gate-Source voltage, VGS
Operating Current
10.6V
10.6V
80 mA
Power dissipation
500 mW
Operating temperature range SCL, PCL
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = GND TA = 25°C unless otherwise specified
ALD210800A
ALD210800
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
Min
-0.01
Typ
0.00
Max
0.01
Min
-0.02
Typ
0.00
Max
0.02
Offset Voltage
VOS
12
2 10
Offset Voltage Tempco
TCVOS
Gate Threshold Voltage Tempco TCVGS(th)
Drain Source On Current
Forward Transconductance
IDS (ON)
GFS
5
-1.6
0.0
+1.6
70
50
24
5
-1.6
0.0
+1.6
70
50
24
Transconductance Mismatch
Output Conductance
GFS
GOS
1.8
1.6
1.8
1.6
Drain Source On Resistance
RDS (ON)
25
25
Drain Source On Resistance
Drain Source On Resistance
Tolerance
RDS (ON)
RDS (ON)
10
2.0
1.8
10
2.0
1.8
Unit
Test Conditions
V IDS =10µA, VDS = 0.1V
mV VGS(th)M1-VGS(th)M2
or VGS(th)M3-VGS(th)M4
µV/°C VDS1 = VDS2
mV/°C
mA
µA
mmho
ID = 10 µA, VDS = 0.1 V
ID = 380 uA, VDS = 0.1V
ID = 700 uA, VDS = 0.1 V
VGS = +4.0V, VDS = +5V
VGS = +0.1V, VDS = +0.1V
VGS = +4.0V
VDS = +5.0V
%
mmho
VGS = +4.0V
VDS = +5.0V
VGS = +5.0V
VDS = +0.1V
KVDS = +0.1V, VGS = +0.0V
VDS = +0.1V, VGS = +0.1V
% VDS = +0.1V
VGS = +5.0V
Drain Source On Resistance
Mismatch
RDS (ON)
Drain Source Breakdown
Voltage
BVDSX
Drain Source Leakage Current1 IDS (OFF)
10
Gate Leakage Current1
IGSS
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
CISS
CRSS
ton
0.6
10 400
4
5 200
1
15
1
10
0.6
10
10
5
15
1
10
%
V
400 pA
4 nA
200 pA
1 nA
pF
pF
ns
V-= VGS = -1.0V
IDS = 10µA
VGS = -1.0V, VDS =+5V
V- = -5V
TA = 125°C
VGS = +5V, VDS = 0V
TA =125°C
V+ = 5V, RL= 5K
Turn-off Delay Time
toff
Crosstalk
Notes: 1 Consists of junction leakage currents
ALD210800/ALD210800A
10 10
60 60
Advanced Linear Devices
ns V+ = 5V, RL= 5K
dB f = 100KHz
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Part Number ALD210800
Description PRECISION N-CHANNEL EPAD MOSFET ARRAY
Maker Advanced Linear Devices
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