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Advanced Power Electronics
Advanced Power Electronics

9915H Datasheet Preview

9915H Datasheet

AP9915H

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9915H pdf
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Advanced Power
Electronics Corp.
AP9915H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Single Drive Requirement
Description
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
50mΩ
20A
GD S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=125
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
GD
S
TO-251(J)
Rating
20
± 12
20
16
41
26
0.2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
4.8
110
Unit
/W
/W
Data and specifications subject to change without notice
200218032



Advanced Power Electronics
Advanced Power Electronics

9915H Datasheet Preview

9915H Datasheet

AP9915H

No Preview Available !

9915H pdf
AP9915H/J
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Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS= ± 12V
ID=10A
VDS=20V
VGS=5V
VDS=10V
ID=10A
RG=3.3Ω,VGS=5V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=1Ω
VGS=0V
VDS=20V
f=1.0MHz
20 - - V
- 0.03 - V/
- - 50 mΩ
- - 80 mΩ
0.5 - 1.2 V
- 13 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 7.5 - nC
- 0.9 - nC
- 4 - nC
- 4.5 - ns
- 49.5 - ns
- 12 - ns
- 6 - ns
- 195 - pF
- 126 - pF
- 50 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25, IS=20A, VGS=0V
Min. Typ. Max. Units
- - 20 A
- - 41 A
- - 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.


Part Number 9915H
Description AP9915H
Maker Advanced Power Electronics
Total Page 6 Pages
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