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Advanced Power Electronics
Advanced Power Electronics

AP2451GY Datasheet Preview

AP2451GY Datasheet

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2451GY pdf
Advanced Power
Electronics Corp.
AP2451GY
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Capable of 2.5V gate drive
Lower on-resistance
Surface mount package
D2
D2
D1
D1
Description
2928-8
G2
S2
G1
S1
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
20V
37mΩ
5A
-20V
75mΩ
-3.7A
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
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ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
20 -20
±12 ±12
5 -3.7
4 -3
20 -20
1.38
0.01
-55 to 150
-55 to 150
Max.
Value
90
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
200119051



Advanced Power Electronics
Advanced Power Electronics

AP2451GY Datasheet Preview

AP2451GY Datasheet

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2451GY pdf
AP2451GY
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
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Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=6A
VGS=4.5V, ID=5A
VGS=2.5V, ID=3A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=5V, ID=5A
VDS=20V, VGS=0V
VDS=16V, VGS=0V
VGS=±12V
ID=5A
VDS=16V
VGS=4.5V
VDS=10V
ID=1A
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RG=3.3Ω,VGS=10V
RD=10Ω
VGS=0V
VDS=20V
f=1.0MHz
Gate Resistance
f=1.0MHz
20 - - V
- 0.02 - V/
- - 32 mΩ
- - 37 mΩ
- - 55 mΩ
0.5 - 1.2 V
- 13 -
S
- - 1 uA
- - 10 uA
- - ±100 nA
- 9 15 nC
- 1.5 - nC
- 4 - nC
- 9 - ns
- 10 - ns
- 16 - ns
- 5 - ns
- 620 990 pF
- 120 - pF
- 100 - pF
- 1.2 1.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=5A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 20 - ns
- 11 - nC


Part Number AP2451GY
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 7 Pages
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