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Advanced Power Electronics
Advanced Power Electronics

AP2532GY Datasheet Preview

AP2532GY Datasheet

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2532GY pdf
Advanced Power
Electronics Corp.
AP2532GY
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Low Gate Charge
Fast Switching Performance
Surface Mount Package
D2
S1
D1
SOT-26
G2
S2
G1
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial surface
mount applications.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
130mΩ
2.4A
-30V
250mΩ
-1.8A
D1 D2
G1 G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
30 -30
±20 ±20
2.4 -1.8
1.9 -1.4
10 -10
1.14
0.01
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
110
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
201018074-1/7



Advanced Power Electronics
Advanced Power Electronics

AP2532GY Datasheet Preview

AP2532GY Datasheet

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2532GY pdf
AP2532GY
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=1A
VGS=4.5V, ID=0.5A
VDS=VGS, ID=250uA
VDS=10V, ID=1A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=1.8A
VDS=10V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
RD=15Ω
VGS=0V
VDS=10V
f=1.0MHz
f=1.0MHz
30 -
-V
- - 130 mΩ
- - 250 mΩ
1.2 -
3V
- 1.6 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 2.7 4.3 nC
- 0.9 - nC
- 1.2 - nC
- 4.3 - ns
- 10 - ns
- 12 - ns
- 2.5 - ns
- 180 290 pF
- 70 - pF
- 50 - pF
- 1.7 2.6 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=0.9A, VGS=0V
IS=1.8A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 16 - ns
- 10 - nC
2/7


Part Number AP2532GY
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 8 Pages
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