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Advanced Power Electronics
Advanced Power Electronics

AP2607GY-HF Datasheet Preview

AP2607GY-HF Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2607GY-HF pdf
Advanced Power
Electronics Corp.
AP2607GY-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Halogen Free & RoHS Compliant Product
G
D
S
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is widely used for all commercial-industrial
applications.
BVDSS
RDS(ON)
ID
-20V
52mΩ
-5A
S
D
D
SOT-26
G
D
D
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
+8
-5
-4
-20
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201104223



Advanced Power Electronics
Advanced Power Electronics

AP2607GY-HF Datasheet Preview

AP2607GY-HF Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2607GY-HF pdf
AP2607GY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=-250uA
VGS=-4.5V, ID=-5A
VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-1A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-5V, ID=-5A
Drain-Source Leakage Current
VDS=-16V, VGS=0V
Drain-Source Leakage Current (Tj=55oC) VDS=-16V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= + 8V, VDS=0V
ID=-5A
Gate-Source Charge
VDS=-10V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-10V
Rise Time
ID=-1A
Turn-off Delay Time
RG=3.3,VGS=-5V
Fall Time
RD=10
Input Capacitance
VGS=0V
Output Capacitance
VDS=-20V
Reverse Transfer Capacitance
f=1.0MHz
-20 - - V
- - 52 mΩ
- - 65 mΩ
- - 90 mΩ
-0.3 - -1 V
-9-S
- - -1 uA
- - -10 uA
- - +100 nA
- 13 21 nC
- 1.5 - nC
- 4.5 - nC
- 10 - ns
- 18 - ns
- 23 - ns
- 31 - ns
- 1030 1650 pF
- 120 - pF
- 105 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.2A, VGS=0V
IS=-5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 29 - ns
- 20 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP2607GY-HF
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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