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Advanced Power Electronics
Advanced Power Electronics

AP2761R-A-HF Datasheet Preview

AP2761R-A-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2761R-A-HF pdf
Advanced Power
Electronics Corp.
AP2761R-A-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On-resistance
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant
G
D
S
Description
AP2761 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
650V
1Ω
10A
G
DS
TO-262(R)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Avalanche Current2
Storage Temperature Range
Operating Junction Temperature Range
650
+30
10
4.4
18
104
0.8
10
-55 to 150
-55 to 150
V
V
A
A
A
W
W/
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
1.2
62
Units
/W
/W
1
201501162



Advanced Power Electronics
Advanced Power Electronics

AP2761R-A-HF Datasheet Preview

AP2761R-A-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2761R-A-HF pdf
AP2761R-A-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance3 VGS=10V, ID=3.5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=3.5A
Drain-Source Leakage Current
VDS=600V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
VGS=+30V, VDS=0V
ID=10A
Gate-Source Charge
VDS=520V
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
VGS=10V
VDD=320V
Rise Time
ID=10A
Turn-off Delay Time
RG=10Ω
Fall Time
VGS=10V
Input Capacitance
Output Capacitance
.VGS=0V
VDS=15V
Reverse Transfer Capacitance
f=1.0MHz
650 - - V
- 0.6 - V/
- - 1Ω
2 - 4V
- 4.5 -
S
- - 10 uA
- - 100 uA
- - +100 nA
- 53 85 nC
- 10 - nC
- 15 - nC
- 16 - ns
- 20 - ns
- 82 - ns
- 36 - ns
- 2750 4430 pF
- 160 - pF
- 6 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time3
Reverse Recovery Charge
Test Conditions
IS=10A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 610 - ns
- 8.64 - µC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1.2mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP2761R-A-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 5 Pages
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