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Advanced Power Electronics
Advanced Power Electronics

AP2763I-A-HF Datasheet Preview

AP2763I-A-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2763I-A-HF pdf
Advanced Power
Electronics Corp.
AP2763I-A-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
D
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
Description
S
AP2763 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink
BVDSS
RDS(ON)
ID4
750V
1.45Ω
8A
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Storage Temperature Range
Operating Junction Temperature Range
750
+30
8
5
30
50
18
-55 to 150
-55 to 150
V
V
A
A
A
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
2.5
65
Units
/W
/W
1
201502254



Advanced Power Electronics
Advanced Power Electronics

AP2763I-A-HF Datasheet Preview

AP2763I-A-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2763I-A-HF pdf
AP2763I-A-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=1mA
VGS=10V, ID=4.0A
VDS=VGS, ID=250uA
VDS=10V, ID=4.0A
VDS=600V, VGS=0V
VGS= +30V, VDS=0V
ID=4A
VDS=600V
VGS=10V
VDD=360V
ID=4A
RG=10Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
.f=1.0MHz
750 -
-
- - 1.45
2-4
-7-
- - 100
- - +100
- 47 75
- 8.5 -
- 20 -
- 15 -
- 13 -
- 74 -
- 21 -
- 1880 3010
- 140 -
-9-
- 2.6 5.2
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage3
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=4.0A, VGS=0V
IS=4.0A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 400 - ns
- 7 - µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Starting Tj=25oC , VDD=50V , RG=25Ω, L=1mH
3.Pulse test
4.Ensure that the junction temperature does not exceed T Jmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP2763I-A-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 5 Pages
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