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Advanced Power Electronics
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AP28G40GEO Datasheet Preview

AP28G40GEO Datasheet

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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AP28G40GEO pdf
Advanced Power
Electronics Corp.
AP28G40GEO
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
High Input Impedance
High Peak Current Capability
Low Gate Drive
Strobe Flash Applications
C
C
C
C
TSSOP-8
G
E
E
E
VCE
ICP
G
400V
150A
C
E
Absolute Maximum Ratings
Symbol
Parameter
VCE
VGEP
ICP
PD@TA=251
TSTG
TJ
Collector-Emitter Voltage
Peak Gate-Emitter Voltage
Pulsed Collector Current, VGE @ 2.5V
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
±6
150
1
-55 to 150
150
Units
V
V
A
W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
IGES
Gate-Emitter Leakage Current
VGE=± 6V, VCE=0V
--
ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V
--
VCE(sat)
Collector-Emitter Saturation Voltage VGE=2.5V, ICP=150A (Pulsed)
- 5.2
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
0.3 -
Qg Total Gate Charge
IC=40A
- 76
Qge Gate-Emitter Charge
VCE=200V
-4
Qgc Gate-Collector Charge
VGE=4V
- 26
td(on)
Turn-on Delay Time
VCC=320V
- 220
tr Rise Time
IC=160A
- 800
td(off)
Turn-off Delay Time
RG=10Ω
- 1.6
tf Fall Time
VGE=4V
- 1.5
Cies Input Capacitance
VGE=0V
- 4485
Coes Output Capacitance
VCE=30V
- 44
Cres
RthJA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
- 40
--
Max.
±10
10
9
1.2
130
-
-
-
-
-
-
8240
-
-
125
Units
uA
uA
V
V
nC
nC
nC
ns
ns
µs
µs
pF
pF
pF
/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.
Data and specifications subject to change without notice
1
200805306



Advanced Power Electronics
Advanced Power Electronics

AP28G40GEO Datasheet Preview

AP28G40GEO Datasheet

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

AP28G40GEO pdf
AP28G40GEO
160
T A =25 o C
120
80
5.0V
4.5V
3.5V
3.0V
V G =2.5V
40
0
0246
V CE , Collector-Emitter Voltage (V)
8
Fig 1. Typical Output Characteristics
240
V CE =6.0V
200
T A =25 o C
160
120 T A =150 o C
80
40
0
012345
V GE , Gate-Emitter Voltage (V)
Fig 3. Collector Current v.s.
Gate-Emitter Voltage
6
T A =25 o C
5
6
4
I C = 120A
3
I C =80A
2 I C =40A
1
012345
V GE , Gate-Emitter Voltage(V)
Fig 5. Collector Current v.s.
Gate-Emitter Voltage
6
80
T A = 150 o C
60
40
5.0 V
4. 5 V
3.5 V
3 .0V
V G = 2.5 V
20
0
0246
V CE , Collector-Emitter Voltage (V)
8
Fig 2. Typical Output Characteristics
6
V GE =4.0V
5
4
3
I C =90A
I C =60A
2
I C =20A
1
0 20 40 60 80 100 120 140 160
Junction Temperature ( o C)
Fig 4. Collector- Emitter Saturation Voltage
v.s. Junction Temperature
8
T A =150 o C
7
6
5 I C =80A
4 I C =60A
3 I C =40A
2
012345
V GE , Gate-Emitter Voltage(V)
Fig 6. Collector Current v.s.
Gate-Emitter Voltage
6
2


Part Number AP28G40GEO
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Maker Advanced Power Electronics
Total Page 4 Pages
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