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Advanced Power Electronics
Advanced Power Electronics

AP2N025N Datasheet Preview

AP2N025N Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2N025N pdf
Advanced Power
Electronics Corp.
AP2N025N
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Capable of 2.5V Gate Drive
Lower Gate Charge
D
Surface Mount Package
RoHS Compliant & Halogen-Free
SOT-23S G
Description
AP2N025 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SOT-23S package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
BVDSS
RDS(ON)
ID
G
20V
25mΩ
5.7A
D
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
20 V
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
+12
5.7
4.6
20
1.25
-55 to 150
-55 to 150
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
100
Unit
/W
1
201505281



Advanced Power Electronics
Advanced Power Electronics

AP2N025N Datasheet Preview

AP2N025N Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2N025N pdf
AP2N025N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=4.5V, ID=5A
VGS=2.5V, ID=2.5A
VDS=VGS, ID=250uA
VDS=5V, ID=5A
VDS=16V, VGS=0V
VGS= +12V, VDS=0V
ID=5A
VDS=10V
VGS=4.5V
VDS=10V
ID=1A
RG=3.3
VGS=5V
VGS=0V
.VDS=10V
f=1.0MHz
20 - - V
- - 25 mΩ
- - 39 mΩ
0.3 - 1.2 V
- 19 -
S
- - 10 uA
- - +100 nA
- 8 12.8 nC
- 1 - nC
- 3 - nC
- 6 - ns
- 20 - ns
- 15 - ns
- 18 - ns
- 700 1100 pF
- 155 - pF
- 120 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 18 - ns
- 6 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 300/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP2N025N
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 6 Pages
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