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Advanced Power Electronics
Advanced Power Electronics

AP2R803GM-HF Datasheet Preview

AP2R803GM-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2R803GM-HF pdf
Advanced Power
Electronics Corp.
AP2R803GM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
G
SS
S
BVDSS
RDS(ON)
ID
Description
AP2R803 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SO-8 package is widely preferred for all commercial-industrial surface
mount applications using infrared reflow technique and suited for voltage
conversion or switch applications.
G
30V
3.2mΩ
22.8A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+12
22.8
18.3
80
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
/W
1
201212111



Advanced Power Electronics
Advanced Power Electronics

AP2R803GM-HF Datasheet Preview

AP2R803GM-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2R803GM-HF pdf
AP2R803GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=20A
VGS=4.5V, ID=10A
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=24V, VGS=0V
VGS=+12V, VDS=0V
ID=20A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3
VGS=10V
VGS=0V
VDS=15V
f=1.0MHz
f=1.0MHz
30 - - V
- - 3.2 m
- - 4.6 m
1 - 3V
- 77 -
S
- - 10 uA
- - +100 nA
- 28 45 nC
- 5.5 - nC
- 13 - nC
- 13 - ns
- 12 - ns
- 51 - ns
- 25 - ns
- 3000 4800 pF
- 700 - pF
- 290 - pF
- 1.4 2.8
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=2.1A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 40 - ns
- 45 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP2R803GM-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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