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Advanced Power Electronics
Advanced Power Electronics

AP30P10GI Datasheet Preview

AP30P10GI Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP30P10GI pdf
Advanced Power
Electronics Corp.
AP30P10GI
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
D
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
S
Description
AP30P10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
BVDSS
RDS(ON)
ID3
-100V
80mΩ
-25A
G
D
S
TO-220CFM(I)
Absolute
Symbol
Maximum
RatingPsa@ramTej=te2r 5oC. (unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
-100
+20
-25
-15
-80
31.3
V
V
A
A
A
W
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
4
65
Units
/W
/W
1
201412093



Advanced Power Electronics
Advanced Power Electronics

AP30P10GI Datasheet Preview

AP30P10GI Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP30P10GI pdf
AP30P10GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=-1mA
VGS=-10V, ID=-12A
VGS=-4.5V, ID=-8A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-12A
VDS=-80V, VGS=0V
VGS= +20V, VDS=0V
ID=-18A
VDS=-80V
VGS=-10V
VDS=-50V
ID=-18A
RG=3.3Ω
VGS=-10V
VGS=0V
.VDS=-25V
f=1.0MHz
-100 -
-
- - 80
- - 100
-1 - -3
- 23 -
- - -25
- - +100
- 50 80
- 7.5 -
- 16.5 -
- 12 -
- 33 -
- 61 -
- 78 -
- 2580 4130
- 185 -
- 140 -
V
m
m
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=-18A, VGS=0V
IS=-18A, VGS=0V,
dI/dt=-100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed T Jmax..
Min. Typ. Max. Units
- - -1.3 V
- 53 - ns
- 125 - nC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP30P10GI
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 5 Pages
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