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Advanced Power Electronics
Advanced Power Electronics

AP30P10GS-HF Datasheet Preview

AP30P10GS-HF Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP30P10GS-HF pdf
Advanced Power
Electronics Corp.
AP30P10GS-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
Description
AP30P10 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-263 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for high current application due to the low
connection resistance.
D
S
BVDSS
RDS(ON)
ID
-100V
80mΩ
-25A
GD S
TO-263(S)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-100
+20
-25
-15
-80
89
-55 to 150
-55 to 150
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data and specifications subject to change without notice
Value
1.4
40
Units
/W
/W
1
201501273



Advanced Power Electronics
Advanced Power Electronics

AP30P10GS-HF Datasheet Preview

AP30P10GS-HF Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP30P10GS-HF pdf
AP30P10GS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=-1mA
VGS=-10V, ID=-12A
VGS=-4.5V, ID=-8A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-12A
VDS=-80V, VGS=0V
VGS= +20V, VDS=0V
ID=-18A
VDS=-80V
VGS=-10V
VDS=-50V
ID=-18A
RG=3.3Ω,VGS=-10V
RD=2.8Ω
VGS=0V
VDS=-25V
f=1.0MHz
-100 - - V
- - 80 m
- - 100 m
-1 - -3 V
- 23 -
S
- - -25 uA
- - +100 nA
- 50 80 nC
- 7.5 - nC
- 16.5 - nC
- 12 - ns
- 33 - ns
- 61 - ns
- 78 - ns
- 2580 4130 pF
- 185 -
- 140 -
pF
pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=-18A, VGS=0V
IS=-18A, VGS=0V,
dI/dt=-100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
Min. Typ. Max. Units
- - -1.3 V
- 53 - ns
- 125 - nC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP30P10GS-HF
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 5 Pages
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