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Advanced Power Electronics
Advanced Power Electronics

AP3310H Datasheet Preview

AP3310H Datasheet

P-CHANNEL ENHANCEMENT MODE

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AP3310H pdf
Advanced Power
Electronics Corp.
AP3310H/J
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
2.5V Gate Drive Capability
D
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Description
G
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
This device is suited for low voltage and battery power
applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=100
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
BVDSS
RDS(ON)
ID
-20V
150mΩ
-10A
G D S TO-252(H)
G
D
S
TO-251(J)
Rating
- 20
± 12
-10
-6.2
-24
25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
5.0
110
Unit
/W
/W
Data and specifications subject to change without notice
201225023



Advanced Power Electronics
Advanced Power Electronics

AP3310H Datasheet Preview

AP3310H Datasheet

P-CHANNEL ENHANCEMENT MODE

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AP3310H pdf
AP3310H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2.0A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2.8A
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
VGS= ± 12V
ID=-2.8A
VDS=-6V
VGS=-5V
VDS=-6V
ID=-1A
RG=6Ω,VGS=-5V
RD=6Ω
VGS=0V
VDS=-6V
f=1.0MHz
-20 - - V
- -0.1 - V/
- - 150 mΩ
- - 250 mΩ
-0.5 - - V
- 4.4 - S
- - -1 uA
- - -25 uA
- - ±100 nA
- 6 - nC
- 1.5 - nC
- 0.6 - nC
- 25 - ns
- 60 - ns
- 70 - ns
- 60 - ns
- 300 - pF
- 180 - pF
- 60 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
Tj=25, IS=-10A, VGS=0V
Min. Typ. Max. Units
- - -10 A
- - -24 A
- - -1.2 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.


Part Number AP3310H
Description P-CHANNEL ENHANCEMENT MODE
Maker Advanced Power Electronics
Total Page 6 Pages
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