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Advanced Power Electronics
Advanced Power Electronics

AP90T03GH-HF Datasheet Preview

AP90T03GH-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP90T03GH-HF pdf
Advanced Power
Electronics Corp.
AP90T03GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower On- resistance
D
Simple Drive Requirement
Fast Switching Characteristic
G
RoHS Compliant & Halogen-Free
S
Description
AP90T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance.
BVDSS
RDS(ON)
ID
30V
4mΩ
75A
G D S TO-252(H)
Absolute Maximum Ratings@Tj=25.oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current4, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
30 V
+20 V
75 A
63 A
350 A
PD@TC=25
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
96
-55 to 150
-55 to 150
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data & specifications subject to change without notice
Value
1.3
62.5
Unit
/W
/W
1
201408263



Advanced Power Electronics
Advanced Power Electronics

AP90T03GH-HF Datasheet Preview

AP90T03GH-HF Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP90T03GH-HF pdf
AP90T03GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=45A
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=24V, VGS=0V
VGS= +20V, VDS=0V
ID=40A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω
VGS=10V
VGS=0V
.VDS=25V
f=1.0MHz
30 -
-V
- - 4 m
- - 6 m
0.8 -
3V
- 55 -
S
- - 10 uA
- - +100 nA
- 60 96 nC
- 8.5
nC
- 38
nC
- 14 - ns
- 83 - ns
- 66 - ns
- 120 - ns
- 4090 6540 pF
- 1010 -
- 890 -
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 51 - ns
- 63 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
4.Package limitation current is 75A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Part Number AP90T03GH-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 5 Pages
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