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Advanced Power Electronics
Advanced Power Electronics

AP9972GP Datasheet Preview

AP9972GP Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9972GP pdf
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Advanced Power
Electronics Corp.
AP9972GS/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Single Drive Requirement
Surface Mount Package
Description
G
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9972GP)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Avalanche Current3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
BVDSS
RDS(ON)
ID
60V
18mΩ
60A
G D S TO-263(S)
G
D
S
Rating
60
±25
60
38
230
89
0.7
450
30
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/
mJ
A
Value
1.4
62
Units
/W
/W
Data and specifications subject to change without notice
1
200803183



Advanced Power Electronics
Advanced Power Electronics

AP9972GP Datasheet Preview

AP9972GP Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP9972GP pdf
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Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=35A
VGS=4.5V, ID=25A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=35A
VDS=60V, VGS=0V
VDS=48V ,VGS=0V
VGS=±25V
ID=35A
VDS=48V
VGS=4.5V
VDS=30V
ID=35A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=0.86Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
60 - - V
- 0.06 - V/
- - 18 mΩ
- - 22 mΩ
1 - 3V
- 55 -
S
- - 10 uA
- - 25 uA
- - ±100 nA
- 32 51 nC
- 8 - nC
- 20 - nC
- 11 - ns
- 58 - ns
- 45 - ns
- 80 - ns
- 3170 5070 pF
- 280 - pF
- 230 - pF
- 1.7 -
Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=35A, VGS=0V
IS=35A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 50 - ns
- 48 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2


Part Number AP9972GP
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 6 Pages
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