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Advanced Power Technology
Advanced Power Technology

APT10026JN Datasheet Preview

APT10026JN Datasheet

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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APT10026JN pdf
DSS
G
G
S
D SOT-227
APT10026JN 1000V 33A 0.26
ISOTOP®
POWER MOS IV®
"UL Recognized" File No. E145592 (S)
SINGLE DIE ISOTOP® PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT
10026JN
UNIT
VDSS
ID
IDM, lLM
VGS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1 and Inductive Current Clamped
Gate-Source Voltage
1000
33
132
±30
Volts
Amps
Volts
PD Total Power Dissipation @ TC = 25°C
Linear Derating Factor
690
5.52
Watts
W/°C
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
BVDSS (VGS = 0V, ID = 250 µA)
APT10026JN
ID(ON)
On State Drain Current 2
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance 2
RDS(ON) (VGS = 10V, 0.5 ID [Cont.])
APT10026JN
APT10026JN
IDSS
IGSS
VGS(TH)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5.0mA)
THERMAL CHARACTERISTICS
MIN
1000
33
2
TYP
MAX UNIT
Volts
Amps
0.26
Ohms
250
1000
±100
4
µA
nA
Volts
Symbol Characteristic
MIN TYP MAX UNIT
RΘJC
RΘCS
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
0.05
0.18
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT10026JN Datasheet Preview

APT10026JN Datasheet

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

No Preview Available !

APT10026JN pdf
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6
APT10026JN
MIN TYP MAX UNIT
11610 14000
1345 1880
415 620
pF
465 700
83 125 nC
61 90
21 40
19 40
ns
70 105
14 30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS
Continuous Source Current
(Body Diode)
APT10026JN
ISM
Pulsed Source Current 1
(Body Diode)
APT10026JN
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
t rr Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
MIN TYP MAX UNIT
33
Amps
132
1250
49
1.8
2000
70
Volts
ns
µC
PACKAGE CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
LD
LS
VIsolation
CIsolation
Torque
Internal Drain Inductance (Measured From Drain Terminal to Center of Die.)
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
2500
3
5
70
13
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.2
0.1 D=0.5
0.05
0.2
0.1
0.01
0.005
0.001
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.0005
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
nH
Volts
pF
lb•in


Part Number APT10026JN
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Maker Advanced Power Technology
Total Page 4 Pages
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