http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Advanced Power Technology
Advanced Power Technology

APT10026L2LL Datasheet Preview

APT10026L2LL Datasheet

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

No Preview Available !

APT10026L2LL pdf
APT10026L2LL
1000V 38A 0.260W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
TO-264
Max
D
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg • Popular TO-264 MAX Package
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
APT10026L2LL
Drain-Source Voltage
1000
Continuous Drain Current @ TC = 25°C
LPulsed Drain Current 1
ICAGate-Source Voltage Continuous
NGate-Source Voltage Transient
HTotal Power Dissipation @ TC = 25°C
EC NLinear Derating Factor
T IOOperating and Storage Junction Temperature Range
E TLead Temperature: 0.063" from Case for 10 Sec.
NC MAAvalanche Current 1 (Repetitive and Non-Repetitive)
VA RRepetitive Avalanche Energy 1
AD INFOSingle Pulse Avalanche Energy 4
38
152
±30
±40
890
7.12
-55 to 150
300
38
50
3200
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
1000
38
3
0.260
100
500
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT10026L2LL Datasheet Preview

APT10026L2LL Datasheet

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

No Preview Available !

APT10026L2LL pdf
DYNAMIC CHARACTERISTICS
APT10026L2LL
Symbol Characteristic
Test Conditions
MIN TYP MAX
Ciss
Coss
Input Capacitance
Output Capacitance
VGS = 0V
VDS = 25V
7680
1270
Crss Reverse Transfer Capacitance
f = 1 MHz
252
Qg
Qgs
ALQgd
ICtd(on)
Ntr
Htd(off)
EC Ntf
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 10V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6W
E T TIOSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
NC MASymbol
VA RIS
D FOISM
A INVSD
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
294
45
196
17
8
39
9
MIN TYP
t rr Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
1182
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
31.9
dv/dt Peak Diode Recovery dv/dt 5
MAX
38
152
1.3
10
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RqJC
RqJA
Junction to Case
Junction to Ambient
0.14
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 4.43mH, RG = 25W, Peak IL = 38A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS £ -ID[Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-264 MAXTM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434
5,256,583 4,748,103 5,283,202
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
5,182,234 5,019,522
5,231,474 5,434,095
5,262,336
5,528,058


Part Number APT10026L2LL
Description Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Maker Advanced Power Technology
Total Page 2 Pages
PDF Download
APT10026L2LL pdf
Download PDF File
APT10026L2LL pdf
View for Mobile






Related Datasheet

1 APT10026L2LL Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Advanced Power Technology
Advanced Power Technology
APT10026L2LL pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components