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Advanced Power Technology
Advanced Power Technology

APT1002R4BN Datasheet Preview

APT1002R4BN Datasheet

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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APT1002R4BN pdf
D
G
S
TO-247
APT1002RBN 1000V 7.0A 2.00
POWER MOS IV®
APT1002R4BN 1000V 6.5A 2.40
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT
APT
1002RBN 1002R4BN UNIT
VDSS Drain-Source Voltage
1000
1000
Volts
ID Continuous Drain Current @ TC = 25°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
7.0 6.5
28 26
±30
Amps
Volts
PD Total Power Dissipation @ TC = 25°C
Linear Derating Factor
240
1.96
Watts
W/°C
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
BVDSS
Drain-Source Breakdown Voltage
(VGS = 0V, ID = 250 µA)
APT1002RBN
APT1002R4BN
ID(ON)
On State Drain Current 2
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
APT1002RBN
APT1002R4BN
Drain-Source On-State Resistance 2
RDS(ON) (VGS = 10V, 0.5 ID [Cont.])
APT1002RBN
APT1002R4BN
IDSS
IGSS
VGS(TH)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
THERMAL CHARACTERISTICS
MIN
1000
1000
7.0
6.5
2
TYP
MAX UNIT
Volts
Amps
2.00
2.40
250
1000
±100
4
Ohms
µA
nA
Volts
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.51
40
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT1002R4BN Datasheet Preview

APT1002R4BN Datasheet

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

No Preview Available !

APT1002R4BN pdf
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8
APT1002R/1002R4BN
MIN TYP MAX UNIT
1530
230
80
1800
325
120
pF
66 105
6.5 10 nC
36 54
14 28
13 26
ns
55 82
19 37
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN TYP MAX UNIT
IS
Continuous Source Current
(Body Diode)
APT1002RBN
APT1002R4BN
ISM
Pulsed Source Current 1
(Body Diode)
APT1002RBN
APT1002R4BN
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
t rr Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
7.0
6.5
Amps
28
26
1.3 Volts
450 910 ns
2.5 5 µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
ILM
Characteristic
Test Conditions / Part Number
Safe Operating Area
Safe Operating Area
VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
Inductive Current Clamped
APT1002RBN
APT1002R4BN
MIN
240
240
28
26
TYP
MAX
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
0.5
D=0.5
UNIT
Watts
Amps
0.1
0.05
0.2
0.1
0.05
0.02 Note:
0.01
0.01
t1
0.005
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT1002R4BN
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Maker Advanced Power Technology
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