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Advanced Power Technology
Advanced Power Technology

APT10030L2VR Datasheet Preview

APT10030L2VR Datasheet

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT10030L2VR pdf
APT10030L2VR
1000V 33A 0.300W
POWER MOS V®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-264
Max
• TO-264 MAX Package
• 100% Avalanche Tested
D
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
G
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
APT10030L2VR
Drain-Source Voltage
LContinuous Drain Current @ TC = 25°C
ICAPulsed Drain Current 1
NGate-Source Voltage Continuous
HGate-Source Voltage Transient
EC NTotal Power Dissipation @ TC = 25°C
T IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
NC MALead Temperature: 0.063" from Case for 10 Sec.
VA RAvalanche Current 1 (Repetitive and Non-Repetitive)
D ORepetitive Avalanche Energy 1
A INFSingle Pulse Avalanche Energy 4
1000
33
132
±30
±40
830
6.64
-55 to 150
300
33
50
3200
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
MIN
1000
33
2
TYP
MAX
0.300
25
250
±100
4
UNIT
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT10030L2VR Datasheet Preview

APT10030L2VR Datasheet

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

No Preview Available !

APT10030L2VR pdf
DYNAMIC CHARACTERISTICS
APT10030L2VR
Symbol Characteristic
Test Conditions
MIN TYP MAX
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
11170
1010
520
Qg Total Gate Charge 3
VGS = 10V
510
Qgs
Qgd
ALtd(on)
ICtr
Ntd(off)
Htf
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 0.5 VDSS
ID = 0.5 ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6W
41
210
19
17
80
12
E TECTIONSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
NC ASymbol
VA RMIS
D OISM
A INFVSD
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
MIN TYP MAX
33
132
1.3
t rr Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
1150
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
31
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RqJC
RqJA
Junction to Case
Junction to Ambient
0.15
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 5.88mH, RG = 25W, Peak IL = 33A
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-264 MAXTM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434
5,256,583 4,748,103 5,283,202
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
5,182,234 5,019,522
5,231,474 5,434,095
5,262,336
5,528,058


Part Number APT10030L2VR
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Maker Advanced Power Technology
Total Page 2 Pages
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1 APT10030L2VFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Advanced Power Technology
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2 APT10030L2VR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Advanced Power Technology
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