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Advanced Power Technology
Advanced Power Technology

APT1004RKN Datasheet Preview

APT1004RKN Datasheet

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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APT1004RKN pdf
D
TO-220
G
S
APT1004RKN 1000V 3.6A 4.00
APT1004R2KN 1000V 3.5A 4.20
POWER MOS IV®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT1004R2KN APT1004RKN UNIT
VDSS Drain-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
PD Total Power Dissipation @ TC = 25°C, Derate Above 25°C
TJ,TSTG Operating and Storage Junction Temperature Range
1000
1000
3.5 3.6
14.0 14.4
±30
125
-55 to 150
Volts
Amps
Amps
Volts
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
APT1004RKN
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) APT1004R2KN
IDSS
IGSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
(VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
ID(ON)
On State Drain Current 2
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
APT1004RKN
APT1004R2KN
RDS(ON)
Static Drain-Source On-State Resistance
(VGS = 10V, ID = 0.5 ID [Cont.])
2
APT1004RKN
APT1004R2KN
MIN
1000
1000
3.6
3.5
2
TYP MAX UNIT
250
1000
±100
4
4.00
4.20
Volts
Volts
µA
nA
Amps
Amps
Volts
Ohms
Ohms
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
TL
Junction to Case
Junction to Ambient
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
MIN TYP MAX UNIT
1.00 °C/W
80 °C/W
300 °C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT1004RKN Datasheet Preview

APT1004RKN Datasheet

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

No Preview Available !

APT1004RKN pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V, ID = ID [Cont.]
VDD = 0.5 VDSS
VDD = 0.5 VDSS
ID = ID [Cont.], VGS = 15V
RG = 1.8
APT1004R/1004R2KN
MIN TYP MAX UNIT
805 950 pF
115 160 pF
37 60 pF
35 55 nC
4.3 6.5 nC
18 27 nC
10 20 ns
9 18 ns
32 48 ns
23 46 ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
IS Continuous Source Current (Body Diode)
APT1004RKN
APT1004R2KN
ISM Pulsed Source Current 1 (Body Diode)
APT1004RKN
APT1004R2KN
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
t rr Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge
MIN
150
0.8
TYP
290
1.65
MAX
3.6
3.5
14.4
14.0
1.3
580
3.3
UNIT
Amps
Amps
Amps
Amps
Volts
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol Characteristic
Test Conditions / Part Number
MIN TYP MAX UNIT
SOA1 Safe Operating Area
SOA2 Safe Operating Area
ILM Inductive Current Clamped
VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
APT1004RKN
APT1004R2KN
125
125
14.4
14.0
Watts
Watts
Amps
Amps
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
D=0.5
0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.01 SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.004
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT1004RKN
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Maker Advanced Power Technology
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