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Advanced Power Technology
Advanced Power Technology

APT10057WVR Datasheet Preview

APT10057WVR Datasheet

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT10057WVR pdf
APT10057WVR
1000V 17.3A 0.570
POWER MOS V®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-267
• Faster Switching
• 100% Avalanche Tested
D
• Lower Leakage
• New TO-267 Package
G
MAXIMUM RATINGS
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT10057WVR
1000
17.3
69.2
±30
±40
450
3.6
-55 to 150
300
17.3
50
2500
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
1000
17.3
2
0.570
25
250
±100
4
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035 Phone: (541) 382-8028
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT10057WVR Datasheet Preview

APT10057WVR Datasheet

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

No Preview Available !

APT10057WVR pdf
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6
APT10057WVR
MIN TYP MAX UNIT
6600 7900
595 830 pF
290 430
335 500
29 45 nC
165 250
16 32
13 26
ns
59 90
8 16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
t rr
Q rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
MIN TYP MAX UNIT
17.3
Amps
69.2
1.3 Volts
960 ns
22 µC
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.28
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 16.71mH, RG = 25, Peak IL = 17.3A
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
0.1
0.05
D=0.5
0.2
0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT10057WVR
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Maker Advanced Power Technology
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