http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Advanced Power Technology
Advanced Power Technology

APT100GF60JRD Datasheet Preview

APT100GF60JRD Datasheet

The Fast IGBT is a new generation of high voltage power IGBTs.

No Preview Available !

APT100GF60JRD pdf
APT100GF60JRD
600V 140A
Fast IGBT & FRED
The Fast IGBTis a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT™ combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
EE
G C SOT-227
ISOTOP®
"UL Recognized"
C
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
G
E
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT100GF60JRD
UNIT
VCES
VCGR
VGE
I C1
I C2
I CM1
I CM2
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20K)
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1 @ TC = 25°C
Pulsed Collector Current 1 @ TC = 90°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
600
±20
140
100
280
200
390
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol Characteristic / Test Conditions
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.8mA)
Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
MIN TYP MAX UNIT
600
4.5 5.5 6.5
Volts
2.5 2.7
3.3 3.9
0.8
TBD
mA
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702 -1035 Phone: (541) 382-8028
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT100GF60JRD Datasheet Preview

APT100GF60JRD Datasheet

The Fast IGBT is a new generation of high voltage power IGBTs.

No Preview Available !

APT100GF60JRD pdf
DYNAMIC CHARACTERISTICS (IGBT)
Symbol Characteristic
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 4
Turn-off Switching Energy
Total Switching Losses 4
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses 4
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.8VCES
IC = IC2
RG = 5
MIN
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 5
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 5
TJ = +25°C
VCE = 20V, IC = IC2
6
APT100GF60JRD
TYP MAX UNIT
4400 5900
890 1250 pF
290 435
335
40 nC
195
30
105
ns
145
135
40
200
ns
250
140
7.0
5.6 mJ
13.6
40
200
ns
210
115
11.0
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol Characteristic
RΘJC
Junction to Case (IGBT)
Junction to Case (FRED)
RΘJA Junction to Ambient
WT Package Weight
MIN
Torque Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 Leakages include the FRED and IGBT.
3 See MIL-STD-750 Method 3471
4 Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYP
1.03
29.2
MAX
0.32
0.42
40
10
1.1
UNIT
°C/W
oz
gm
lb•in
N•m


Part Number APT100GF60JRD
Description The Fast IGBT is a new generation of high voltage power IGBTs.
Maker Advanced Power Technology
Total Page 5 Pages
PDF Download
APT100GF60JRD pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 APT100GF60JR The Fast IGBT is a new generation of high voltage power IGBTs. Advanced Power Technology
Advanced Power Technology
APT100GF60JR pdf
2 APT100GF60JRD The Fast IGBT is a new generation of high voltage power IGBTs. Advanced Power Technology
Advanced Power Technology
APT100GF60JRD pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components