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Advanced Power Technology
Advanced Power Technology

APT100GF60LR Datasheet Preview

APT100GF60LR Datasheet

The Fast IGBT is a new generation of high voltage power IGBTs.

No Preview Available !

APT100GF60LR pdf
APT100GF60B2R
APT100GF60LR
600V 100A
APT100GF60B2R
Fast IGBT
T-Max
(B2R)
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• Low Tail Current
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
G
C
E
G
C
C
E
• Avalanche Rated
• RBSOA and SCSOA Rated
G
TO-264
(LR)
APT100GF60LR
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: TC = 25°C unless otherwise specified.
APT100GF60B2R/LR UNIT
VCES
VCGR
VEC
VGE
I C1
I C2
I CM1
I CM2
EAS
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20K)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current 5 @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1 @ TC = 25°C
Pulsed Collector Current 1 @ TC = 90°C
Single Pulse Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
600
15
±20
100
100
280
200
85
390
-55 to 150
300
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVCES
RBVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, IC = 50mA)
Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
600
-15
4.5 5.5 6.5 Volts
2.2 2.7
2.8 3.4
1.0
TBD
mA
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035 Phone: (541) 382-8028
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT100GF60LR Datasheet Preview

APT100GF60LR Datasheet

The Fast IGBT is a new generation of high voltage power IGBTs.

No Preview Available !

APT100GF60LR pdf
DYNAMIC CHARACTERISTICS (IGBT)
Symbol Characteristic
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses 4
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.80VCES
IC = IC2
RG = 10
MIN
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +25°C
VCE = 20V, IC = IC2
6
APT100GF60B2R/LR
TYP MAX UNIT
4400 6000
480 675 pF
300 450
126
20 nC
75
50
200
ns
190
270
50
170
ns
400
95
6.3
5.2 mJ
11.5
5.5
180
ns
360
90
10.5
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol Characteristic
MIN TYP MAX UNIT
RΘJC
Junction to Case (IGBT)
Junction to Case (FRED)
0.42
0.90
°C/W
RΘJA Junction to Ambient
WT Package Weight
40
0.22
6.1
oz
gm
Torque Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
10 lb•in
1.1 N•m
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 5 The maximum current is limited by lead temperature.
2 IC = IC2, VCC = 50V, RGE = 25, L = 17µH, Tj = 25°C
3 See MIL-STD-750 Method 3471
4 The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT100GF60LR
Description The Fast IGBT is a new generation of high voltage power IGBTs.
Maker Advanced Power Technology
Total Page 3 Pages
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Advanced Power Technology
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