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Advanced Power Technology
Advanced Power Technology

APT10M09B2VFR Datasheet Preview

APT10M09B2VFR Datasheet

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT10M09B2VFR pdf
APT10M09B2VFR
APT10M09LVFR
100V 100A 0.009W
POWER MOS V ® FREDFET B2VFR
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Identical Specifications: T-MAX™ or TO-264 Package
T-MAX
TO-264
LVFR
D
• Lower Leakage
• Fast Recovery Body Diode
MAXIMUM RATINGS
• Faster Switching
• 100% Avalanche Tested
G
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
ALContinuous Drain Current @ TC = 25°C 5
ICPulsed Drain Current 1 5
NGate-Source Voltage Continuous
CHGate-Source Voltage Transient
TE NTotal Power Dissipation @ TC = 25°C
D IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
NC MALead Temperature: 0.063" from Case for 10 Sec.
A RAvalanche Current 1 5 (Repetitive and Non-Repetitive)
V ORepetitive Avalanche Energy 1
AD INFSingle Pulse Avalanche Energy 4
APT10M09
100
100
400
±30
±40
625
5.0
-55 to 150
300
100
50
3000
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 5 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
100
100
2
0.009
100
500
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT10M09B2VFR Datasheet Preview

APT10M09B2VFR Datasheet

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

No Preview Available !

APT10M09B2VFR pdf
DYNAMIC CHARACTERISTICS
APT10M09 B2VFR - LVFR
Symbol Characteristic
Test Conditions
MIN TYP MAX
Ciss Input Capacitance
VGS = 0V
10030
Coss Output Capacitance
VDS = 25V
3730
Crss Reverse Transfer Capacitance
f = 1 MHz
1370
Qg
LQgs
AQgd
ICtd(on)
Nt r
CHtd(off)
TE Ntf
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
D IOSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
CE ATSymbol
N MIS
A RISM
DV FOVSD
A INdv/dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 6
340
109
131
18
36
51
9
MIN TYP MAX
100
400
1.3
5
Reverse Recovery Time
trr (IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
190
370
Reverse Recovery Charge
Qrr (IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
0.4
1.7
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
9
15
UNIT
pF
nC
ns
UNIT
Amps
Volts
V/ns
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RqJC
RqJA
Junction to Case
Junction to Ambient
0.20
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum Tj
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 600µH, RG = 25W, Peak IL = 100A
5 The maximum current is limited by lead temperature.
6 IS £ -ID [Cont.], di/dt = 100A/µs, VR = 50V, Tj £ 150°C, RG = 2.0W
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX(B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
20.80 (.819)
21.46 (.845)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
3.10 (.122)
3.48 (.137)
25.48 (1.003)
26.49 (1.043)
0.40 (.016)
0.79 (.031)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903
5,256,583 4,748,103
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
Gate
Collector
Emitter
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.59 (.102)
2.79 (.110)
3.00 (.118)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
5,089,434 5,182,234 5,019,522 5,262,336
5,283,202 5,231,474 5,434,095 5,528,058


Part Number APT10M09B2VFR
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Maker Advanced Power Technology
Total Page 2 Pages
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