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Advanced Power Technology
Advanced Power Technology

APT11044LFLL Datasheet Preview

APT11044LFLL Datasheet

POWER MOS 7 FREDFET

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APT11044LFLL pdf
APT11044B2FLL
APT11044LFLLwww.DataSheet4U.com
1100V 26A 0.440
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX
TO-264
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
FAST RECOVERY BODY DIODE
D
G
S
MAXIMUM RATINGS
Symbol Parameter
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
PD Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
STATIC ELECTRICAL CHARACTERISTICS
All Ratings: TC = 25°C unless otherwise specified.
APT11044JFLL
UNIT
1100
Volts
26
Amps
104
±30
Volts
±40
694 Watts
5.56 W/°C
-55 to 150
300
26
°C
Amps
50
3000
mJ
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, 13A)
1100
0.440
IDSS Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C)
250
1000
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
35
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Ohms
µA
nA
Volts



Advanced Power Technology
Advanced Power Technology

APT11044LFLL Datasheet Preview

APT11044LFLL Datasheet

POWER MOS 7 FREDFET

No Preview Available !

APT11044LFLL pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 550V
ID = 22A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 550V
ID = 22A @ 25°C
RG = 0.6
INDUCTIVE SWITCHING @ 25°C
VDD = 733V, VGS = 15V
ID = 22A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 733V VGS = 15V
ID = 22A, RG = 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -26A)
dv/dt Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -26A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr (IS = -26A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Peak Recovery Current
IRRM (IS = -26A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
APT11044B2FLL - LFLL
MIN TYP MAX UNIT
56w43ww.DataSheet4U.com
828 pF
153
180
32 nC
111
18
9 ns
45
14
961
581
1812
µJ
899
MIN TYP MAX UNIT
26 Amps
104
1.3 Volts
10 V/ns
320
ns
650
3.60
µC
9.72
16.5
Amps
24.7
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.18
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 8.88mH, RG = 25, Peak IL = 26A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -26A di/dt 700A/µs VR 1100 TJ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.16
0.9
0.12
0.7
0.08
0.04
0
10-5
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT11044LFLL
Description POWER MOS 7 FREDFET
Maker Advanced Power Technology
Total Page 5 Pages
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