http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Advanced Power Technology
Advanced Power Technology

APT11058JFLL Datasheet Preview

APT11058JFLL Datasheet

POWER MOS 7 FREDFET

No Preview Available !

APT11058JFLL pdf
APT11058JFLL
www.DataSheet4U.com
1100V 18A 0.580
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Qg. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
lRoDsSs(OeNs)
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
SS
G D SOT-227
ISOTOP®
"UL Recognized"
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
FAST RECOVERY BODY DIODE
D
G
S
MAXIMUM RATINGS
Symbol Parameter
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
STATIC ELECTRICAL CHARACTERISTICS
All Ratings: TC = 25°C unless otherwise specified.
APT11058JFLL
UNIT
1100
Volts
18
Amps
72
±30 Volts
±40
463 Watts
3.70 W/°C
-55 to 150
300
°C
18 Amps
50
2500
mJ
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 9A)
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
1100
3
0.580
250
1000
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Ohms
µA
nA
Volts



Advanced Power Technology
Advanced Power Technology

APT11058JFLL Datasheet Preview

APT11058JFLL Datasheet

POWER MOS 7 FREDFET

No Preview Available !

APT11058JFLL pdf
DYNAMIC CHARACTERISTICS
APT11058JFLL
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 550V
ID = 18A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 550V
ID = 18A @ 25°C
RG = 0.6
INDUCTIVE SWITCHING @ 25°C
VDD = 733V, VGS = 15V
ID = 18A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 733V VGS = 15V
ID = 18A, RG = 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -18A)
dv/dt Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -18A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr (IS = -18A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Peak Recovery Current
IRRM (IS = -18A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
41w35ww.DataSheet4U.com
680 pF
120
160
20 nC
105
16
8 ns
40
12
700
210
1450
µJ
270
MIN TYP MAX UNIT
18 Amps
72
1.3 Volts
18 V/ns
300 ns
600
1.7 µC
4.47
11.4
16.4 Amps
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.27
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 15.43mH, RG = 25, Peak IL = 18A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID18A di/dt 700A/µs VR VDSS TJ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
0.25
0.9
0.20
0.7
0.15
0.10
0.05
0
10-5
0.5 Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10


Part Number APT11058JFLL
Description POWER MOS 7 FREDFET
Maker Advanced Power Technology
Total Page 5 Pages
PDF Download
APT11058JFLL pdf
Download PDF File
APT11058JFLL pdf
View for Mobile






Related Datasheet

1 APT11058JFLL POWER MOS 7 FREDFET Advanced Power Technology
Advanced Power Technology
APT11058JFLL pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components