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Advanced Power Technology
Advanced Power Technology

APT1201R2SLL Datasheet Preview

APT1201R2SLL Datasheet

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

No Preview Available !

APT1201R2SLL pdf
APT1201R2BLL
APT1201R2SLL
1200V 12A 1.200W
POWER MOS 7TM
BLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
TO-247
D3PAK
SLL
D
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D3PAK Package
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
APT1201R2
Drain-Source Voltage
LContinuous Drain Current @ TC = 25°C
ICAPulsed Drain Current 1
NGate-Source Voltage Continuous
HGate-Source Voltage Transient
EC NTotal Power Dissipation @ TC = 25°C
T IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
NC MALead Temperature: 0.063" from Case for 10 Sec.
VA RAvalanche Current 1 (Repetitive and Non-Repetitive)
D FORepetitive Avalanche Energy 1
A INSingle Pulse Avalanche Energy 4
1200
12
48
±30
±40
400
3.20
-55 to 150
300
12
30
1300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
MIN
1200
12
3
TYP
MAX
1.20
100
500
±100
5
UNIT
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT1201R2SLL Datasheet Preview

APT1201R2SLL Datasheet

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

No Preview Available !

APT1201R2SLL pdf
DYNAMIC CHARACTERISTICS
APT1201R2 BLL - SLL
Symbol Characteristic
Test Conditions
MIN TYP MAX
Ciss
Coss
Input Capacitance
Output Capacitance
VGS = 0V
VDS = 25V
2817
391
Crss Reverse Transfer Capacitance
f = 1 MHz
294
Qg Total Gate Charge 3
VGS = 10V
99
Qgs
LQgd
Atd(on)
ICtr
HNtd(off)
Ctf
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6W
E TE TIONSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
NC ASymbol
VA RMIS
D OISM
A INFVSD
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
12
59
14
9
44
21
MIN TYP MAX
12
48
1.3
t rr Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
850
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
11.0
dv/dt Peak Diode Recovery dv/dt 5
10
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
V/ns
THERMAL CHARACTERISTICS
Symbol
RqJC
RqJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.31
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 18.06mH, RG = 25W, Peak IL = 12A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS £ -ID[Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-247 Package Outline
D3PAK Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
13.41 (.528)
13.51 (.532)
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058


Part Number APT1201R2SLL
Description Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Maker Advanced Power Technology
Total Page 2 Pages
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