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Advanced Power Technology
Advanced Power Technology

APT14050JVFR Datasheet Preview

APT14050JVFR Datasheet

POWER MOS V FREDFET

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APT14050JVFR pdf
APT14050JVFR
1400V 23A 0.500
POWER MOS V ® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
• Lower Leakage
• Faster Switching
• Avalanche Energy Rated
• Popular SOT-227 Package
SS
G D SOT-227
ISOTOP®
"UL Recognized"
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT14050JVFR
UNIT
www.DataSheet4U.com
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
1400
23
92
±30
±40
Volts
Amps
Volts
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
694
5.56
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
23
50
3600
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 11.5A)
Zero Gate Voltage Drain Current (VDS = 1400V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 1120V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
1400
2
0.500
250
1000
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com



Advanced Power Technology
Advanced Power Technology

APT14050JVFR Datasheet Preview

APT14050JVFR Datasheet

POWER MOS V FREDFET

No Preview Available !

APT14050JVFR pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge 3
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on) Turn-on Delay Time
t r Rise Time
td(off) Turn-off Delay Time
tf Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 700V
ID = 23A @ 25°C
VGS = 15V
VDD = 700V
ID = 23A @ 25°C
RG = 0.6
APT14050JVFR
MIN TYP MAX UNIT
13500
1150
pF
600
820
55 nC
375
20
18 ns
110
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = ID -23A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID 23A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID 23A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID 23A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN TYP MAX UNIT
23
92 Amps
1.3 Volts
18 V/ns
300
600 ns
1.8
7.4 µC
16
30 Amps
THERMAL/ PACKAGE CHARACTERISTICS
Symbol
RθJC
RθJA
VIsolation
Torque
Characteristic
MIN
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
2500
Maximum Torque for Device Mounting Screws and Electrical Terminations.
TYP
MAX
0.18
40
10
UNIT
°C/W
Volts
lb•in
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 13.61mH, RG = 25, Peak IL = 23A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID23A di/dt 700A/µs VR 1400 TJ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
0.16 0.9
0.7
0.12
0.08
0.04
0
10-5
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10


Part Number APT14050JVFR
Description POWER MOS V FREDFET
Maker Advanced Power Technology
Total Page 4 Pages
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