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Advanced Power Technology
Advanced Power Technology

APT15GF170BR Datasheet Preview

APT15GF170BR Datasheet

IGBT

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APT15GF170BR pdf
APT15GF170BR
1700V 25A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
TO-247
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
G
C
E
G
C
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: TC = 25°C unless otherwise specified.
APT15GF170BR
UNIT
VCES
VCGR
VEC
VGE
I C1
I C2
I CM1
I CM2
EAS
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20K)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1 @ TC = 25°C
Pulsed Collector Current 1 @ TC = 90°C
Single Pulse Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1700
1700
15
±20
25
15
50
32
23
310
-55 to 150
300
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVCES
RBVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.25mA)
Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA)
Gate Threshold Voltage (VCE = VGE, I C = 350µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±25V, VCE = 0V)
1700
-15
4.5
5.5
3.5
TBD
6.5
4.2
250
1000
±100
Volts
µA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT15GF170BR Datasheet Preview

APT15GF170BR Datasheet

IGBT

No Preview Available !

APT15GF170BR pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.66VCES
IC = 0.8IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.66VCES
IC = 0.8IC2
RG = 5
MIN
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = 0.8IC2
RG = 5
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = 0.8IC2
RG = 5
TJ = +25°C
VCE = 20V, IC = 15A
APT15GF170BR
TYP MAX UNIT
2000
160 pF
65
TBD
TBD
nC
TBD
TBD
TBD
TBD
ns
TBD
TBD
TBD
120
ns
35
TBD
TBD
mJ
TBD
TBD
TBD
TBD
ns
TBD
TBD
mJ
TBD
S
THERMAL CHARACTERISTICS
Symbol Characteristic
RΘJC
RΘJA
Torque
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN TYP MAX UNIT
0.40
40
°C/W
10 lb•in
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 IC = 15A, VCC = 50V, RGE = 25, L = 200µH, Tj = 25°C
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT15GF170BR
Description IGBT
Maker Advanced Power Technology
Total Page 3 Pages
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