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Advanced Power Technology
Advanced Power Technology

APT17N80SC3 Datasheet Preview

APT17N80SC3 Datasheet

Super Junction MOSFET

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APT17N80SC3 pdf
APT17N80BC3
APT17N80SC3www.DataSheet4U.com
800V 17A 0.290
Super Junction MOSFET
D3PAK
COOLMOS
Power Semiconductors
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-247 or Surface Mount D3PAK Package
TO-247
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT17N80BC3_SC3 UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
800 Volts
17
Amps
51
±20 Volts
±30
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
208
1.67
Watts
W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 640V, ID = 17A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
-55 to 150
300
50
17
0.5
670
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 11A)
0.25 0.29
IDSS
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 150°C)
0.5 25
250
IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
2.10 3
3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com
"COOLMOScomprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"



Advanced Power Technology
Advanced Power Technology

APT17N80SC3 Datasheet Preview

APT17N80SC3 Datasheet

Super Junction MOSFET

No Preview Available !

APT17N80SC3 pdf
DYNAMIC CHARACTERISTICS
APT17N80BC3_SC3
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 0 to10V
VDD = 400V
ID = 17A @ 25°C
RESISTIVE SWITCHING
VGS = 10V
VDD = 400V
ID = 17A @ 125°C
RG = 4.7
INDUCTIVE SWITCHING @ 25°C
VDD = 533V, VGS = 15V
ID = 17A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 533V, VGS = 15V
ID = 17A, RG = 5
MIN
TYwPww.DMatAaSXheet4UUN.cIoTm
2255
1045
55
pF
90
11 nC
45
25
15
70 82 ns
69
245
140
425 µJ
170
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -17A)
t rr Reverse Recovery Time (IS = -17A, dlS/dt = 100A/µs, VR = 400V)
Q rr Reverse Recovery Charge (IS = -17A, dlS/dt = 100A/µs, VR = 400V)
dv/dt Peak Diode Recovery dv/dt 5
THERMAL CHARACTERISTICS
MIN TYP MAX UNIT
17
51 Amps
1 1.2 Volts
550 ns
15 µC
6 V/ns
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.60
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 115.92mH, RG = 25, Peak IL = 3.4A
5 IS = -17A di/dt = 100A/µs VR = 480V TJ = 125°C
6 Eon includes diode reverse recovery. See figures 18, 20.
3 See MIL-STD-750 Method 3471
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
10-5
0.9
0.7
0.5 Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0


Part Number APT17N80SC3
Description Super Junction MOSFET
Maker Advanced Power Technology
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