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Advanced Power Technology
Advanced Power Technology

APT20M10JFLL Datasheet Preview

APT20M10JFLL Datasheet

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

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APT20M10JFLL pdf
APT20M10JFLL
200V 185A 0.010W
POWER MOS 7TM FREDFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
SS
G D SOT-227
ISOTOP®
"UL Recognized"
D
• Lower Gate Charge, Qg • Popular SOT-227 Package
G
FAST RECOVERY BODY DIODE
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
APT20M10JFLL
Drain-Source Voltage
LContinuous Drain Current @ TC = 25°C
ICAPulsed Drain Current 1
NGate-Source Voltage Continuous
HGate-Source Voltage Transient
EC NTotal Power Dissipation @ TC = 25°C
T IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
NC MALead Temperature: 0.063" from Case for 10 Sec.
VA RAvalanche Current 1 (Repetitive and Non-Repetitive)
D FORepetitive Avalanche Energy 1
A INSingle Pulse Avalanche Energy 4
200
185
740
±30
±40
735
5.88
-55 to 150
300
185
50
3600
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
200
185
3
0.010
250
1000
±100
5
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT20M10JFLL Datasheet Preview

APT20M10JFLL Datasheet

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

No Preview Available !

APT20M10JFLL pdf
DYNAMIC CHARACTERISTICS
APT20M10JFLL
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
Ciss
Coss
Input Capacitance
Output Capacitance
VGS = 0V
VDS = 25V
12780
4330
Crss Reverse Transfer Capacitance
f = 1 MHz
327
Qg
Qgs
LQgd
ICAtd(on)
tr
HNtd(off)
Ctf
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
TE IONSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
E TSymbol
NC MAIS
VA RISM
D FOVSD
A INdv/dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
316
96
174
15
35
41
12
MIN TYP MAX
185
740
1.3
5
Reverse Recovery Time
trr (IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
250
500
Reverse Recovery Charge
Qrr (IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
0.9
2.5
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
12
20
pF
nC
ns
UNIT
Amps
Volts
V/ns
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RqJC Junction to Case
RqJA Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
0.17
40
°C/W
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = .21mH, RG = 25W, Peak IL = 185A
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP®) Package Outline
r = 4.0 (.157)
(2 places)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Gate
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058


Part Number APT20M10JFLL
Description Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Maker Advanced Power Technology
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