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Advanced Power Technology
Advanced Power Technology

APT20M13PVR Datasheet Preview

APT20M13PVR Datasheet

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

No Preview Available !

APT20M13PVR pdf
APT20M13PVR
200V 146A 0.013
POWER MOS V®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V® also
achieves faster switching speeds through optimized gate layout.
P-Pack
• Faster Switching
• 100% Avalanche Tested
D
• Lower Leakage
• New High Power P-Pack Package
G
MAXIMUM RATINGS
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT20M13PVR
200
146
584
±30
±40
625
5.0
-55 to 150
300
146
30
3600
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
200
146
2
0.013
100
500
±100
4
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702 -1035 Phone: (541) 382-8028
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT20M13PVR Datasheet Preview

APT20M13PVR Datasheet

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

No Preview Available !

APT20M13PVR pdf
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6
APT20M13PVR
MIN TYP MAX UNIT
18000
4100
1350
pF
630
95 nC
290
20
40
ns
75
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
t rr
Q rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
MIN TYP MAX UNIT
146
Amps
584
1.5 Volts
460 ns
7 µC
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.20
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = .34mH, RG = 25, Peak IL =146A
APT Reserves the right to change, without notice, the specifications and information contained herein.
3.43 (.135)
2.92 (.115)
(4-Places)
P-Pack Package Outline
41.53 (1.635)
41.02 (1.615)
35.18 (1.385)
34.67 (1.365)
28.70 (1.130)
28.45 (1.120)
3.43 (.135)
2.92 (.115)
(4-Places)
9.27 (.365)
8.64 (.340)
1.40 (.055)
1.02 (.040)
51.05 (2.01)
50.55 (1.99)
35.81 (1.41)
35.31 (1.39)
29.34 (1.155)
29.08 (1.145)
4.06 (.160)
3.81 (.150)
(5 Places)
11.63 (.458)
11.13 (.438)
10.92 (.430)
10.67 (.420)
4.39 (.173)
4.14 (.163)
(4 Places)
12.45 (.490)
11.94 (.470)
Dimensions in Millimeters and (Inches)
5.33 (.210)
4.83 (.190)
.635 (.025)
.381 (.015)


Part Number APT20M13PVR
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Maker Advanced Power Technology
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Advanced Power Technology
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