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Advanced Power Technology
Advanced Power Technology

APT20M20B2FLL Datasheet Preview

APT20M20B2FLL Datasheet

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

No Preview Available !

APT20M20B2FLL pdf
APT20M20B2FLL
APT20M20LFLL
200V 100A 0.020W
POWER MOS 7TM FREDFET B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
T-MAX
TO-264
LFLL
D
• Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package G
FAST RECOVERY BODY DIODE
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
APT20M20
Drain-Source Voltage
200
Continuous Drain Current @ TC = 25°C
LPulsed Drain Current 1 5
ICAGate-Source Voltage Continuous
NGate-Source Voltage Transient
HTotal Power Dissipation @ TC = 25°C
EC NLinear Derating Factor
T IOOperating and Storage Junction Temperature Range
E TLead Temperature: 0.063" from Case for 10 Sec.
NC MAAvalanche Current 1 (Repetitive and Non-Repetitive)
VA RRepetitive Avalanche Energy 1
AD INFOSingle Pulse Avalanche Energy 4
100
400
±30
±40
570
4.56
-55 to 150
300
100
50
2500
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
200
100
3
0.020
250
1000
±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT20M20B2FLL Datasheet Preview

APT20M20B2FLL Datasheet

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

No Preview Available !

APT20M20B2FLL pdf
DYNAMIC CHARACTERISTICS
APT20M20 B2FLL - LFLL
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
5870
1990
150
pF
Qg
Qgs
LQgd
ICAtd(on)
tr
HNtd(off)
Ctf
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
TE IONSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
E TSymbol
NC MAIS
VA RISM
D OVSD
A INFdv/dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
145
44
80
12
22
26
6
MIN TYP MAX
100
400
1.3
5
Reverse Recovery Time
trr (IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
220
420
Reverse Recovery Charge
Qrr (IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
0.8
3.0
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
10
18
nC
ns
UNIT
Amps
Volts
V/ns
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX
RqJC
RqJA
Junction to Case
Junction to Ambient
0.22
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = .5mH, RG = 25W, Peak IL = 100A
5 The maximum current is limited by lead temperature
APT Reserves the right to change, without notice, the specifications and information contained herein.
UNIT
°C/W
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
2.29 (.090)
2.69 (.106)
Gate
Drain
Source


Part Number APT20M20B2FLL
Description Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Maker Advanced Power Technology
Total Page 2 Pages
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