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Advanced Power Technology
Advanced Power Technology

APT20M22JVFR Datasheet Preview

APT20M22JVFR Datasheet

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT20M22JVFR pdf
APT20M22JVFR
200V 97A 0.022
POWER MOS V ® FREDFET
SS
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
G
D SOT-227
also achieves faster switching speeds through optimized gate layout.
ISOTOP®
"UL Recognized"
• Fast Recovery Body Diode
• 100% Avalanche Tested
D
• Lower Leakage
• Popular SOT-227 Package
FREDFET
• Faster Switching
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT20M22JVFR
200
97
388
±30
±40
450
3.6
-55 to 150
300
97
50
2500
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
200
97
2
0.022
250
1000
±100
4
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035 Phone: (541) 382-8028
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61



Advanced Power Technology
Advanced Power Technology

APT20M22JVFR Datasheet Preview

APT20M22JVFR Datasheet

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

No Preview Available !

APT20M22JVFR pdf
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6
APT20M22JVFR
MIN TYP MAX UNIT
8500 10200
1950 2730 pF
560 840
290 435
66 100 nC
120 180
16 32
25 50
ns
48 72
5 10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN TYP MAX UNIT
97
Amps
388
1.3 Volts
5 V/ns
220
ns
420
0.8
µC
3.0
10
Amps
18
THERMAL / PACKAGE CHARACTERISTICS
Symbol Characteristic
MIN
RθJC
RθJA
VIsolation
Torque
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
2500
TYP
MAX
0.28
40
13
UNIT
°C/W
Volts
lb•in
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 531µH, RG = 25, Peak IL = 97A
5 IS -ID [Cont.], di/dt = 100A/µs, VDD VDSS, Tj 150°C, RG = 2.0,
VR = 200V
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
D=0.5
0.1
0.2
0.05
0.1
0.05
0.01
0.005
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT20M22JVFR
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Maker Advanced Power Technology
Total Page 4 Pages
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Advanced Power Technology
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