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Advanced Power Technology
Advanced Power Technology

APT20N60BCFG Datasheet Preview

APT20N60BCFG Datasheet

Super Junction FREDFET

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APT20N60BCFG pdf
COOLMOS
Power Semiconductors
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
www.DataSheet4EUx.tcroemme dv/dt Rated
600V 20A 0.220
APT20N60BCF
APT20N60SCF
APT20N60BCFG* APT20N60SCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Super Junction FREDFET
• Intrinsic Fast-Recovery Body Diode
• Extreme Low Reverse Recovery Charge
• Ideal For ZVS Applications
• Popular TO-247 or Surface Mount D3 Package
TO-247
D3PAK
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT20N60BCF(G)_SCF(G) UNIT
VDSS
ID
IDM
VGS
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
600 Volts
20
13 Amps
60
±30 Volts
208 Watts
1.67 W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 20A, TJ = 125°C)
Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
-55 to 150
260
80
20
1
690
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 13A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
600
0.220
2.1
1700
±100
345
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Volts
Ohms
µA
nA
Volts



Advanced Power Technology
Advanced Power Technology

APT20N60BCFG Datasheet Preview

APT20N60BCFG Datasheet

Super Junction FREDFET

No Preview Available !

APT20N60BCFG pdf
DYNAMIC CHARACTERISTICS
APT20N60BCF(G)_SCF(G)
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
www.DataSheet4U.Ecoofmf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 20A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 380V
ID = 20A @ 25°C
RG = 3.6
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 20A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
ID = 20A, RG = 5
MIN
TYP
2520
670
40
95
18
55
12
15
60
6.4
180
60
315
80
MAX
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS
ISM
VSD
dv/dt
t rr
Q rr
IRRM
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -20A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -20A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -20A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -20A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
20 Amps
60
1.2 Volts
40 V/ns
180 ns
260
1.4 µC
2.5
15
18
Amps
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.60
62
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4
5
Sddvet/avdrittcinneugimtsTebj le=f.r+s2ISr5e°flCec,-tLIDth2=e01Al3im.8dit0ia/mdtitoH≤n,sR7oG0f0=thA2e/µ5tses,tPVcReira≤cku4iItL8r0=aVth1e0rATtJhan1t2h5e°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitive avalanche causes additional power losses that can be calcu-
APT Reserves the right to change, without notice, the specifications and infloartmedataiosnPcAoVnt=aiEneAdRh*ferein.
0.70
0.60
0.9
0.50
0.7
0.40
0.30 0.5
Note:
0.20 0.3
t1
t2
0.10 0.1
0 0.05
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT20N60BCFG
Description Super Junction FREDFET
Maker Advanced Power Technology
Total Page 5 Pages
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