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Advanced Power Technology
Advanced Power Technology

APT20N60CC3 Datasheet Preview

APT20N60CC3 Datasheet

Super Junction MOSFET

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APT20N60CC3 pdf
APT20N60CC3www.DataSheet4U.com
600V 14A 0.210
Super Junction MOSFET
COOLMOS
Power Semiconductors
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Hermetic TO-254 Package
TO-254
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT20N60CC3
UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
600 Volts
14
Amps
42
±20 Volts
±30
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
104
0.83
Watts
W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 14A, TJ = 125°C)
Repetitive Avalanche Current 6
Repetitive Avalanche Energy 6
Single Pulse Avalanche Energy 4
-55 to 150
300
50
20
1
690
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID =13.1A)
600
0.18 0.21
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TJ = 150°C)
0.05 25
250
IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
2.1 3 3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Volts
Ohms
µA
nA
Volts
"COOLMOScomprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"



Advanced Power Technology
Advanced Power Technology

APT20N60CC3 Datasheet Preview

APT20N60CC3 Datasheet

Super Junction MOSFET

No Preview Available !

APT20N60CC3 pdf
DYNAMIC CHARACTERISTICS
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 0 to10V
VDD = 480V
ID = 20A @ 25°C
VGS = 13V
VDD = 380 V
ID = 20A
RG = 3.6Ω, TJ = 125°C
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
t rr
Q rr
dv/dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -14A)
Reverse Recovery Time (IS = -14A, dlS/dt = 100A/µs) VR = 480V
Reverse Recovery Charge (IS = -14A, dlS/dt = 100A/µs) VR = 480V
Peak Diode Recovery dv/dt 5
wwAw.PDaTt2aS0hNee6t40UC.coCm3
MIN TYP MAX UNIT
2440
860 pF
50
90 114
13 nC
45
10
5 ns
65 100
5 12
MIN TYP MAX UNIT
14
42 Amps
1 1.2 Volts
500 800 ns
11 µC
6 V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
1.20
62
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 13.80mH, RG = 25, Peak IL = 10A
5 IS -ID20A di/dt 700A/µs VR VDSS TJ 150°C
6 Repetitve avalanche causes additional power losses that can be
3 See MIL-STD-750 Method 3471
calculated as PAV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-254 Package Outline
1.27 (.050)
1.02 (.040)
13.84 (.545)
13.59 (.535)
6.91 (.272)
6.81 (.268)
20.32 (.800)
20.06 (.790)
13.84 (.545)
13.59 (.535)
17.40 (.685)
16.89 (.665)
3.78
3.53
(.149)
(.139)
Dia.
3.81 (.150) BSC
6.60 (.260)
6.32 (.249)
31.37 (1.235)
30.35 (1.195)
1.14 (.045) Dia. Typ.
.89 (.035) 3 Leads
3.81 (.150) BSC
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.


Part Number APT20N60CC3
Description Super Junction MOSFET
Maker Advanced Power Technology
Total Page 2 Pages
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