http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Advanced Power Technology
Advanced Power Technology

APT20N60SC3 Datasheet Preview

APT20N60SC3 Datasheet

Super Junction MOSFET

No Preview Available !

APT20N60SC3 pdf
APT20N60BC3
APT20N60SC3
600V 20.7A 0.190
Super Junction MOSFET
COOLMOS
Power Semiconductors
TO-247
D3PAK
• Ultra low RDS(ON)
• Low Miller Capacitance
www.DataSheet4UU.lctorma Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT20N60BC3_SC3 UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
600
20.7
62
±20
±30
Volts
Amps
Volts
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
208
1.67
Watts
W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 20.7A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
-55 to 150
260
50
20
1
690
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 13.1A)
600
0.16 0.19
IDSS
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
0.05 25
250
IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
2.1 3 3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Volts
Ohms
µA
nA
Volts
"COOLMOScomprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"



Advanced Power Technology
Advanced Power Technology

APT20N60SC3 Datasheet Preview

APT20N60SC3 Datasheet

Super Junction MOSFET

No Preview Available !

APT20N60SC3 pdf
DYNAMIC CHARACTERISTICS
APT20N60B_SC3
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
www.DataSheet4U.Ecoomn
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 20.7A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 380V
ID = 20.7A @ 25°C
RG = 3.6
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 20.7A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 400V VGS = 15V
ID = 20.7A, RG = 5
MIN TYP MAX UNIT
2440
860
50
90
13
45
10
5
65
114
pF
nC
ns
5
180
120
µJ
320
135
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -20.7A)
t rr Reverse Recovery Time (IS = -20.7A, dlS/dt = 100A/µs, VR = 480V)
Q rr Reverse Recovery Charge (IS = -20.7A, dlS/dt = 100A/µs, VR = 480V)
dv/dt Peak Diode Recovery dv/dt 5
20.7 Amps
62
1 1.2 Volts
500 800 ns
11 µC
6 V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.60
62
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 13.80mH, RG = 25, Peak IL = 10A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID20.7A di/dt 700A/µs VR VDSS TJ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
10-5
0.9
0.7
0.5
Note:
0.3 t1
0.1
0.05 SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT20N60SC3
Description Super Junction MOSFET
Maker Advanced Power Technology
Total Page 5 Pages
PDF Download
APT20N60SC3 pdf
Download PDF File
APT20N60SC3 pdf
View for Mobile






Related Datasheet

1 APT20N60SC3 Super Junction MOSFET Advanced Power Technology
Advanced Power Technology
APT20N60SC3 pdf
2 APT20N60SCF Super Junction FREDFET Advanced Power Technology
Advanced Power Technology
APT20N60SCF pdf
3 APT20N60SCFG Super Junction FREDFET Advanced Power Technology
Advanced Power Technology
APT20N60SCFG pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components