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Advanced Power Technology
Advanced Power Technology

APT25GP90B Datasheet Preview

APT25GP90B Datasheet

POWER MOS 7 IGBT

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APT25GP90B pdf
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TYPICAL PERFORMANCE CURVES
APT25GAPPT925G0P9B0B
900V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 100 kHz operation @ 600V, 21A
• 50 kHz operation @ 600V, 33A
• SSOA Rated
TO-247
G CE
G
C
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT25GP90B
UNIT
VCES
VGE
VGEM
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
900
±20
±30
72
36
110
110A @ 900V
417
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX UNIT
900
3 4.5 6
Volts
3.2 3.9
2.7
250
1000
µA
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com



Advanced Power Technology
Advanced Power Technology

APT25GP90B Datasheet Preview

APT25GP90B Datasheet

POWER MOS 7 IGBT

No Preview Available !

APT25GP90B pdf
DYNAMIC CHARACTERISTICS
APT215GP90B
Symbol Characteristic
Test Conditions
Cies Input Capacitance
Capacitance
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
VGEP
Qg
Qge
Qgc
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Gate Charge
VGE = 15V
VCE = 450V
IC = 25A
SSOA Switching Safe Operating Area
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 900V
td(on)
tr
td(off)
tf
Eon1
Eon2
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 25A
RG = 5
TJ = +25°C
Eoff Turn-off Switching Energy 6
td(on)
tr
td(off)
tf
Eon1
Eon2
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 25A
RG = 5
TJ = +125°C
Eoff Turn-off Switching Energy 66
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
RΘJC
RΘJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN
110
MIN
TYP
2100
220
40
7.5
110
16
47
MAX
UNIT
pF
V
nC
A
13
16
55
55
TBD
740
370
13
16
95
95
TBD
1120
750
ns
µJ
ns
µJ
TYP MAX UNIT
.30
N/A °C/W
5.90 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT25GP90B
Description POWER MOS 7 IGBT
Maker Advanced Power Technology
Total Page 6 Pages
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