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Advanced Power Technology
Advanced Power Technology

APT75GN60LDQ3G Datasheet Preview

APT75GN60LDQ3G Datasheet

IGBT

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APT75GN60LDQ3G pdf
TYPICAL PERFORMANCE CURVES
®
AP6T0750GVN60LDQ3(G)
APT75GN60LDQ3
APT75GN60LDQ3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
TO-264
600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 6µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT75GN60LDQ3(G) UNIT
VCES
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VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 8 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
155
93
225
225A @ 600V
536
-55 to 175
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
600
5.0 5.8 6.5
1.05 1.45 1.85
1.87
50
TBD
600
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Units
Volts
µA
nA



Advanced Power Technology
Advanced Power Technology

APT75GN60LDQ3G Datasheet Preview

APT75GN60LDQ3G Datasheet

IGBT

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APT75GN60LDQ3G pdf
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA Switching Safe Operating Area
SCSOA Short Circuit Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 75A
TJ = 175°C, RG = 4.37, VGE =
15V, L = 100µH,VCE = 600V
VCC = 600V, VGE = 15V,
TJ = 125°C, RG = 4.37
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 75A
RG = 1.07
TJ = +25°C
MIN
225
6
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 75A
RG = 1.07
TJ = +125°C
APT75GN60LDQ3(G)
TYP MAX UNIT
4500
370 pF
150
9.5 V
485
30 nC
270
A
47
48
385
38
2500
3725
2140
47
48
430
55
2600
4525
2585
µs
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.28 °C/W
.34
5.9 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4
aEdond1inisg
the clamped inductive turn-on energy of the IGBT only,
to the IGBT turn-on loss. Tested in inductive switching
without the effect
test circuit shown
of
in
a commutating diode reverse recovery current
figure 21, but with a Silicon Carbide diode.
5
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
8 Continuous current limited by package lead temperature to 100A.
APT Reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT75GN60LDQ3G
Description IGBT
Maker Advanced Power Technology
Total Page 9 Pages
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