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Advanced Power Technology
Advanced Power Technology

APT75GT120JRDQ3 Datasheet Preview

APT75GT120JRDQ3 Datasheet

Thunderbolt IGBT

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APT75GT120JRDQ3 pdf
TYPICAL PERFORMANCE CURVES
®
APT1752G0T01V20JRDQ3
APT75GT120JRDQ3
Thunderbolt IGBT®
The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• Low Tail Current
• RBSOA and SCSOA Rated
• Ultra Low Leakage Current
EE
G C SOT-227
ISOTOP®
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT75GT120JRDQ3
UNIT
VCES
VGE
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I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
97
42
225
225A @ 1200V
481
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
Gate Threshold Voltage (VCE = VGE, I C = 3mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
MIN TYP MAX Units
1200
4.5 5.5 6.5 Volts
2.7 3.2 3.7
3.9
200
TBD
µA
480 nA
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com



Advanced Power Technology
Advanced Power Technology

APT75GT120JRDQ3 Datasheet Preview

APT75GT120JRDQ3 Datasheet

Thunderbolt IGBT

No Preview Available !

APT75GT120JRDQ3 pdf
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA Switching Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
APT75GT120JRDQ3
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 75A
TJ = 150°C, RG = 4.3Ω, VGE =
15V, L = 100µH,VCE = 1200V
Inductive Switching (25°C)
VCC = 800V
VGE = 15V
IC = 75A
RG = 1.0
TJ = +25°C
MIN
225
Inductive Switching (125°C)
VCC = 800V
VGE = 15V
IC = 75A
RG = 1.0
TJ = +125°C
TYP
2570
250
155
7.5
240
15
110
MAX
50
65
375
25
8045
8845
2970
50
65
415
29
8050
12660
4215
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
RθJC
WT
VIsolation
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
MIN
Package Weight
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500
TYP
29.2
MAX
.26
.56
UNIT
°C/W
gm
Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4
aEdond1inisg
the clamped inductive turn-on energy of the IGBT only,
to the IGBT turn-on loss. Tested in inductive switching
without the effect
test circuit shown
of
in
a commutating diode reverse recovery current
figure 21, but with a Silicon Carbide diode.
5
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.


Part Number APT75GT120JRDQ3
Description Thunderbolt IGBT
Maker Advanced Power Technology
Total Page 9 Pages
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