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Advanced Power Technology
Advanced Power Technology

SD1496-03 Datasheet Preview

SD1496-03 Datasheet

RF & Microwave Transistors

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SD1496-03 pdf
RF & MICROWAVE TRANSISTORS
800 / 900 MHz APPLICATIONS
SD1496-03
Features
960 MHz
24 VOLTS
POUT = 55 WATTS
mGP = 7.4 dB MINIMUM
oINPUT MATCHED
.cCOMMON BASE CONFIGURATION
UDESCRIPTION:
t4The SD1496-03 is a 24V Class C epitaxial silicon NPN planar
transistor designed primarily for amplifier applications in the
e900 – 960 MHz frequency range. Internal input matching and
common base configuration assure optimum gain and efficiency
eacross the entire frequency band.
.DataShABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
wVCEO
Collector-Emitter Voltage
VCES
Collector-Emitter Voltage
wVEBO
Emitter-Base Voltage
mIC
w oPDISS
Device Current
Power Dissipation
.cTSTG
Storage Temperature
UTJ Junction Temperature
Sheet4Thermal Data
taRTH(J-C)
Thermal Resistance Junction-case
www.Da12-10-2002
Value
50
26
50
4.0
9
190
-65 to +150
+200
0.9
Unit
V
V
V
V
A
W
°C
°C
°C/W



Advanced Power Technology
Advanced Power Technology

SD1496-03 Datasheet Preview

SD1496-03 Datasheet

RF & Microwave Transistors

No Preview Available !

SD1496-03 pdf
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
BVCBO
BVCES
BVCEO
BVEBO
ICES
ICBO
HFE
IC = 50 mA
IC = 50 mA
IC = 50 mA
IE = 10 mA
VCE = 20 V
VCB = 30 V
VCE = 5 V
IE = 0 mA
VBE = 0 mA
IB = 0 mA
IC = 0 mA
IE = 0 mA
IE = 0 mA
IC = 1 A
SD1496-03
Min.
50
50
26
3.0
---
---
20
Value
Typ.
---
---
---
---
---
---
---
Max.
---
---
---
---
10
5
100
Unit
V
V
V
V
mA
mA
---
DYNAMIC
Symbol
POUT
GP
ηC
COB
f = 960MHz
f = 960MHz
f = 960MHz
f = 1 MHz
Test Conditions
PIN = 10W
PIN = 10W
PIN = 10W
VCB = 24V
VCE = 24V
VCE = 24V
VCE = 24V
Min.
60
7.5
50
---
Value
Typ.
---
---
---
---
Max.
---
---
---
70
Unit
dB
dB
%
pF
12-10-2002


Part Number SD1496-03
Description RF & Microwave Transistors
Maker Advanced Power Technology
Total Page 3 Pages
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