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Advanced Semiconductor
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SD1490-1 Datasheet Preview

SD1490-1 Datasheet

NPN Silicon RF Power Transistor

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SD1490-1 pdf
SD1490-1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1490-1 is a Common
Emitter Device Designed for Class A
and AB Amplifier Applications in
Television Band IV & V Transmitters.
omFEATURES INCLUDE:
Gold Metalization
.cEmitter Ballasting
Internal Matching
t4UMAXIMUM RATINGS
IC 8.0 A
eVCB
ePDISS
hTJ
STSTG
taθJC
45 V
155 W @ TC = 25 OC
-55 OC to +200 OC
-55 OC to +200 OC
1.15 OC/W
PACKAGE STYLE .450 BAL FLG.(A)
1 = Collector 2 = Base
3 = Emitter
.DaCHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS (PER SIDE)
BVCEO
IC = 200 mA
wBVCBO
IC = 50 mA
wBVEBO
IE = 10 mA
mhFE VCE = 5.0 V
IC = 3.0 A
MINIMUM TYPICAL MAXIMUM
30
45
3.0
10 100
UNITS
V
V
V
---
w .coCOB
VCB = 28 V
f = 1.0 MHz
72
pF
t4UGP
VCE = 26.5 V
IC = 2 X 1.6 A
f = 860 MHz
8.0
9.0
dB
eeGp
VCE = 28 V
Pout = 50 W
IC = 2 X 250 mA f = 860 MHz
7.0
8.0
dB
taShIMD3
VCE = 26.5 V Pout = 25 W
f = 860 MHz
VISION = -8.0dB SOUND = -10 dB CHROMA = -16dB
-45 dBc
w.DaA D V A N C E D S E M I C O N D U C T O R, I N C.
ww7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
REV. A
1/1
Specifications are subject to change without notice.


Part Number SD1490-1
Description NPN Silicon RF Power Transistor
Maker Advanced Semiconductor
Total Page 1 Pages
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